N PN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HC1061 █ APPLICATIONS Low Frequency Power Amplifier. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-220 Tstg——Storage Temperature………………………… -65~150℃ Tj——Junction Temperature……………………………… 150℃ PC——Collector Dissipation（Tc=25℃）…………………… 25W VCBO ——Collector-Base Voltage……………………………50V 1―Base，B VCEO——Collector-Emitter Voltage………………………… 50V 2―Collector，C 3―Emitter, E VEBO ——Emitter-Base Voltage……………………………… 4V IC ——Collector Current…………………………………… 3.0A ICM——Collector Current（Peak）……………………………… 8A Ib——Base Current……………………………………………0.5A █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Min Typ Max Unit Test Conditions BVCEO Collector-Emitter Breakdown Voltage 50 V IC=50mA, IB=0 BVCBO Collector-Base Breakdown Voltage 50 V IC=5mA, BVEBO Emitter-Base Breakdown Voltage 4 V IE=5mA，IC=0 IE=0 ICBO Collector Cut-off Current 100 μA VCB=25V, IE=0 IEBO Emitter Cut-off Current 100 μA VEB=4V, IC=0 HFE（1） DC Current Gain 35 HFE（2） DC Current Gain 35 VCE=4V, IC=1A 320 VCE=4V, IC=0.1A VCE(sat) Collector- Emitter Saturation Voltage 1.0 V IC=2A, IB=0.2A VBE(on) Base-Emitter On Voltage 1.5 V VCE=4V, IC=1A ft Current Gain-Bandwidth Product 5.0 MHz VCE=4V, IC=0.5A, f=1MHz █ hFE Classification A 35—70 B 60—120 C D 100—200 160—320 Shantou Huashan Electronic Devices Co.,Ltd. N PN S I L I C O N T R A N S I S T O R HC1061