HUASHAN H1609

NPN S I L I C O N T RA N S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
H1609
█ APPLICATIONS
. Audio Power Amplifie.
█ ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
TO-126ML
Tstg——Storage Temperature………………………… -45~150℃
Tj——Junction Temperature……………………………… 150℃
PC——Collector Dissipation(TA=25℃)………………… 1.25W
VCBO ——Collector-Base Voltage………………………… 160V
VCEO ——Collector-Emitter Voltage……………………… 160V
1―Emitter,E
2―Collector,C
3―Base,B
VEBO ——Emitter-Base Voltage……………………………… 5V
IC——Collector Current……………………………………100mA
█ ELECTRICAL CHARACTERISTICS(Ta=25℃)
Symbol
Characteristics
Min
Typ
Max
Unit
Test Conditions
BVCBO
Collector-Base Breakdown Voltage
160
V
IC=10μA, IE=0
BVCEO
Collector-Emitter Breakdown Voltage
160
V
IC=1mA, IB=0
BVEBO
Emitter-Base Breakdown Voltage
5
V
IE=10μA,IC=0
ICBO
10
Collector Cut-off Current
HFE(1) DC Current Gain
60
HFE(2) DC Current Gain
60
VCE=5V, IC=1mA
Cob
2
140
Current Gain-Bandwidth Product
Output Capacitance
VCE=5V, IC=10mA
320
VCE(sat) Collector- Emitter Saturation Voltage
ft
μA VCB=140V, IE=0
3.8
V
IC=30mA, IB=3mA
MHz
VCE=5V, IC=10mA,
pF
VCB=10V, IE=0,f=1MHz
█ hFE Classification
B
C
D
60—120
100—200
160—320