Shantou Huashan Electronic Devices Co.,Ltd. HC106D Sensitive Gate Silicon Controlled Rectifier █ General Description Glassivated PNPN devices designed for high volume consumer applications such as temperature,light,and speed control;process and remote control, and warning systems where reliability of operation is important. █ Features Glassivated Surface for Reliability and Uniformity Power Rated at Economical Prices Practical Level Triggering and Holding Characteristics Flat,Rugged,Thermopad Construction for Low Thermal Resistance Sensitive Gate Triggering █ Maximum Ratings（Tj=25℃ unless otherwise specified） T s t g — — St o r a g e Te mp e r a t u r e - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 4 0 ~ 15 0 ℃ T j ——Operating Junction Temperature ---------------------------------------------- -40~110℃ VDRM —— Peak Repetitive Off-State Voltage(Forward) ------------------------------------------------------ 400V VRRM —— Peak Repetitive Off-State Voltage(Reverse) ------------------------------------------------------- 400V IT（RMS）——On-State R.M.S Current（180º Conduction Angles, TC = 80 °C）----------------------------------4A IT(AV) ——On-State Average Current (180º Conduction Angles, TC = 80 °C) -------------------------------2.55A ITSM ——Surge On-State Current (1/2 Cycle, 60Hz, Sine Wave, Non-repetitive, Tj = 110 °C) --------I2t ——Circuit Fusing Considerations(t = 8.3ms) ---------------------------------------------------------- 20A 1.65A2s PGM ——Forward Peak Gate Power Dissipation (Pulse Width ≤1.0 µsec,Tc=80℃) ---------------------- 0.5W PG(AV) ——Forward Average Gate Power Dissipation (Pulse Width ≤1.0 µsec, Tc=80℃)------------------0.1W IGM ——Forward Peak Gate Current (Pulse Width ≤1.0 µsec, Tc=80℃)-------------------------------------- 0.2A Shantou Huashan Electronic Devices Co.,Ltd. HC106D █ Electrical Characteristics（TC=25℃ unless otherwise specified） Symbol IDRM or Items Min. Typ. VTM Peak Forward On-State Voltage (1) IGT Gate Trigger Current（2） 10 100 2.2 15 35 200 500 uA V uA Gate Trigger Voltage (2) 0.4 0.5 VGRM Peak Reverse Gate Voltage VGD Gate Non-Trigger Voltage IH Unit Peak Repetitive Forward or Reverse Blocking Current. IRRM VGT Max. 0.6 0.75 0.8 1.0 6.0 V V V 0.2 Conditions VAK=Rated VDRM or VRRM RKG=1000 ohms Tj=25℃ Tj=110℃ IFM=1A VAK =6V(DC), RL=100 ohms Tj=25℃ Tj=-40℃ VAK =6V(DC), RL=100 ohms Tj=25℃ Tj=-40℃ IGR=10 uA VAK =12V, RL=100 ohms Tj=110℃ Initiating current=20mA, Holding Current Rth(j-c) Thermal Resistance 3.0 ℃/W Gate open, VD =12V(DC) Tj=25℃ Tj=-40℃ Tj=110℃ VAK =12V, IG=20mA Tj=25℃ Tj=-40℃ Junction to Case Rth(j-a) Thermal Resistance 75 ℃/W Junction to Ambient Maximum Lead Temperature for Soldering Purpose 1/8’’,from case for 10 Seconds Critical Rate-of-Rise Off-state Voltage 260 ℃ IL TL dv/dt 0.19 0.33 0.07 3.0 6.0 2.0 mA 0.2 0.35 5.0 mA Latching Current (1) Pulse Test : Pulse Width ≤2.0ms,Duty Cycle≤2% (2) RGK is not included in measurement 8.0 V/µs VAK= RatedVDRM ,Exponential waveform , RGK=1000 ohms Gate open Tj=110℃ Shantou Huashan Electronic Devices Co.,Ltd. █ Performance Curves HC106D