SEMIHOW HSC106D

= 400 V
Sensitive Gate Silicon Controlled Rectifier
IT(RMS) = 4.0A
FEATURES
Symbol
‰
‰
‰
‰
2.Anode
3.Gate
Repetitive Peak Off-State Voltage (VRM= 400V)
R.M.S On-state Current (IT(RMS)=4.0A)
Average On-state Current (IT(AV)=2.55A)
Sensitive Gate Triggering (0.2mAMax@25℃)
1.Cathode
General Description
1
Glassivated PNPN devices designed for high volume consumer
applications such as temperature, light and speed control ; process
and remote control, and warning systems where reliability of
operation is important.
Absolute Maximum Ratings
Symbol
2
3
HSC106D
(TJ=25℃)
Parameter
Value
Units
VDRM
Repetitive Peak Off-State Voltage (Forward)
400
V
VRRM
Repetitive Peak Off-State Voltage (Reverse)
400
V
IT(RMS)
On-State R.M.S Current
(180˚ Condition Angles, TC=80℃)
4.0
A
IT(AV)
On-State Average Current
(180˚ Condition Angles, TC=80℃)
2.55
A
ITSM
Surge On-State Current (1/2 Cycle, 60Hz, Sine
Wave, Non-repetitive, Tj = 110 °C)
20
A
Circuit Fusing Considerations (t=8.3mS)
1.65
A2s
Forward Peak Gate Power Dissipation
(Pulse Width ≤1.0μsec,Tc=80℃)
0.5
W
PG(AV)
Forward Average Gate Power Dissipation
(Pulse Width ≤1.0μsec, Tc=80℃)
0.1
W
VGRM
Reverse Peak Gate Voltage
6.0
V
IFGM
Forward Peak Gate Current
(Pulse Width ≤1.0 μsec, Tc=80℃)
0.2
A
TSTG
Storage Temperature Range
-40 to +150
℃
Operating Junction Temperature
-40 to +110
℃
I2t
PGM
Tj
◎ SEMIHOW REV.1.1 May 2007
HSC106D
VDRM
HSC106D
Symbol
(Ta=25℃)
Parameter
Test Conditions
Min
Typ
Max
Units
15
35
200
500
uA
0.6
0.75
0.8
1.0
V
IGT
Gate Trigger Current(1)
VAK= 6VDC, RL= 100Ω, TJ= 25℃
VAK= 6VDC, RL= 100Ω, TJ= -40℃
VGT
Gate Trigger Voltage(1)
VAK= 6VDC, RL= 100Ω, TJ= 25℃
VAK= 6VDC, RL= 100Ω, TJ= -40℃
0.4
0.5
VGD
Non Trigger Gate Voltage
VAK= 12VDC, RL= 100Ω, TC= 110℃
0.2
IH
Holding Current
VAK= 12VDC, Gate open,
Initiating current=20mA, TJ= 25℃
TJ= -40℃
TJ = 110℃
0.19
0.33
0.07
3.0
6.0
2.0
mA
IL
Latching Current
VAK= 12VDC, IG= 20mA,
Gate Open,
TJ= 25℃
TJ= 110℃
0.2
0.35
5.0
mA
10
100
uA
uA
2.2
V
IDRM
IRRM
Repetitive or Reverse
Peak Blocking Current
VAK= VDRM or VRRM,
VTM
Peak Forward On-State
Voltage(2)
IFM=1A
dv/dt
Critical Rate of Rise
Off state Voltage
VAK = VDRM, Exponential waveform,
RGK= 1㏀, Gate open,
TJ=110℃
(1)
RGK Current is not included in measurement
(2)
Pulse Test : Pulse width ≤ 2.0mS, Duty Cycle ≤ 2%
V
TC= 25℃
TC= 110℃
8.0
V/uS
Thermal Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Units
RTH(J-C)
Thermal Resistance
Junction to Case
3.0
℃/W
RTH(J-A)
Thermal Resistance
Junction to Ambient
75
℃/W
260
℃
TL
Maximum Lead Temperature for Soldering Purpose 1/8”, from case
for 10second
◎ SEMIHOW REV.1.1 May 2007
HSC106D
Electrical Characteristics
Fig 2. Maximum On-State Power Dissipation
P(AV), Average On-State Power Dissipation (Watt)
Fig 1. Average Current Derating
110
100
TC, Case Temperature (℃)
90
DC
80
70
60
50
Half Sine Wave
Resistive or Inductive Load
50 to 400Hz
40
30
20
10
0
.4
.8
1.2
1.6 2.0 2.4
2.8
10
Junction Temperature = 110℃
8
Half Sine Wave
Resistive or Inductive Load
50 to 400Hz
6
DC
4
2
0
3.2 3.6 4.0
0
IT(AV) Average On-State Current (A)
.8
1.2
1.6 2.0
2.4
2.8
3.2 3.6 4.0
IT(AV) Average On-State Current (A)
Fig 4. Typical Holding Current vs
Junction Temperature
Fig 3. Typical Gate Trigger Current vs
Junction Temperature
100
IH, Holding Current (μA)
100
IGT, Gate Trigger Current (μA)
.4
10
10
1
1
-40 -25 -10
5
20
35
50
65
80
-40 -25 -10
95 110
5
20
35
50
65
80
95 110
TJ Junction Temperature (℃)
TJ Junction Temperature (℃)
Fig 6. Typical Latching Current vs
Junction Temperature
Fig 5. Typical Gate Trigger Voltage vs
Junction Temperature
1000
1.0
0.8
IL, Latching Current (μA)
VGT, Gate Trigger Voltage (V)
0.9
0.7
0.6
0.5
0.4
100
0.3
0.2
-40 -25 -10
10
5
20
35
50
65
TJ Junction Temperature (℃)
80
95 110
-40 -25 -10
5
20
35
50
65
80
95 110
TJ Junction Temperature (℃)
◎ SEMIHOW REV.1.1 May 2007
HSC106D
Performance Curves
HSC106D
Package Dimension
HSC106D
(TO-126)
A
C
L1
B
D
φ
b
C1
L
a
p
p
Dimension Table
Symbol
Dimension
Min
Max
A
-
8.5
B
-
C
-
C1
Symbol
Unit :[ mm]
Dimension
Min
Max
L1
2.3
2.7
12.0
φ
3.0
3.4
2.8
a
0.7
0.86
1.27 Typ
b
D
3.6
4.0
L
-
13.0
p
1.2 Typ
2.3
◎ SEMIHOW REV.1.1 May 2007