HUASHAN HTF8A80

Shantou Huashan Electronic Devices Co.,Ltd.
HTF8A80
ＮＯＮ　ＩＮＳＵＬＡＴＥＤ　ＴＹＰＥ　ＴＲＩＡＣ　（ＴＯ－２２０Ｆ　ＰＡＣＫＡＧＥ）　█　Features
* Repetitive Peak Off-State Voltage: 800V
* R.M.S On-state Current(IT(RMS)=8A)
* High Commutation dv/dt TO-220F
█　General Description
The Triac HTP8A80 is suitable for AC switching application, phase
control application such as heater control, motor control, lighting control,
and static switching relay.
1 2
█ Absolute Maximum Ratings（Ta=25℃）　3
T stg ——Storage Temperature……………………………………………………………… －40~125℃
T j ——Operating Junction Temperature …………………………………………………… －40~125℃　PGM——Peak Gate Power Dissipation………………………………………………………………… 5W
VDRM——Repetitive Peak Off-State Voltage………………………………………………………… 800V
IT（RMS）——R.M.S On-State Current（Ta=105℃）………………………………………………… 8A
VG M ——Peak Gate Voltage ………………………………………………………………… 10V
I G M— — P e a k G a t e C u r r e n t … … … … … … … … … … … … … … … … … … … … … … … 2 . 0 A
ITSM ——Surge On-State Current (One Cycle, 50/60Hz,Peak,Non-Repetitive)………… 80/88A
█ Electrical Characteristics （Ta=25℃）
Symbol
IDRM
Items
Min.
Typ.
Repetitive Peak Off-State Current
Max.
Unit
Conditions
2.0
mA
VD =VDRM, Single Phase,Half
VTM
Peak On-State Voltage
1.4
V
Wave, TJ=125℃
IT=12A, Inst. Measurement
I+GT1
Gate Trigger Current（Ⅰ）
30
mA
VD =6V, RL =10 ohm
I- GT1
Gate Trigger Current（Ⅱ）
30
mA
VD =6V, RL =10 ohm
I-GT3
Gate Trigger Current（Ⅲ）
30
mA
VD =6V, RL =10 ohm
V+ GT1
Gate Trigger Voltage（Ⅰ）
1.5
V
VD =6V, RL =10 ohm
V- GT1
Gate Trigger Voltage（Ⅱ）
1.5
V
VD =6V, RL =10 ohm
V- GT3
Gate Trigger Voltage（Ⅲ）
1.5
V
VD =6V, RL =10 ohm
0.2
V
T J=125℃,VD =1/2VDRM
10
V/µS
VGD
(dv/dt)c
Non-Trigger Gate Voltage
Critical Rate of Rise of Off-State
Voltage at Commutation
T J=125℃,VD =400V
(di/dt)c=-4A/ms
IH
Rth(j-c)
Holding Current
Thermal Resistance
15
mA
3.7
℃/W
Junction to case
Shantou Huashan Electronic Devices Co.,Ltd.
HTF8A80
Shantou Huashan Electronic Devices Co.,Ltd.
HTF8A80