HUASHAN HTP6A60

Shantou Huashan Electronic Devices Co.,Ltd.
HTP6A60
NON INSULATED TYPE TRIAC (TO-220 PACKAGE)
█ Features
* Repetitive Peak Off-State Voltage: 600V
* R.M.S On-state Current(IT(RMS)=6A)
* High Commutation dv/dt
█ General Description
The Triac HTP6A60 is suitable for AC switching application, phase
control application such as heater control, motor control, lighting control,
and static switching relay.
█ Absolute Maximum Ratings(Ta=25℃)
Tstg——Storage Temperature………………………………………………………………… -40~125℃
Tj ——Operating Junction Temperature …………………………………………………… -40~125℃
PGM——Peak Gate Power Dissipation………………………………………………………………… 3W
VDRM——Repetitive Peak Off-State Voltage………………………………………………………… 600V
IT(RMS)——R.M.S On-state Current(Ta=100℃)………………………………………………… 6A
V G M ——Peak Gate Voltage………………………………………………………………… 10V
IGM——Peak Gate Current…………………………………………………………… 2.0A
I TSM——Surge On-state Current (One Cycle, 50/60Hz,Peak,Non-Repetitive)………… 60/66A
█ Electrical Characteristics(Ta=25℃)
Symbol
IDRM
Items
Min.
Typ.
Repetitive Peak Off-State Current
Max.
Unit
1.0
mA
Conditions
VD=VDRM,Single
Phase,Half
VTM
Peak On-State Voltage
1.5
V
Wave, TJ=125℃
IT=8A, Inst. Measurement
I+GT1
Gate Trigger Current(Ⅰ)
20
mA
VD=6V, RL=10 ohm
I- GT1
Gate Trigger Current(Ⅱ)
20
mA
VD=6V, RL=10 ohm
I- GT3
Gate Trigger Current(Ⅲ)
20
mA
VD=6V, RL=10 ohm
V+ GT1
Gate Trigger Voltage(Ⅰ)
1.5
V
VD=6V, RL=10 ohm
V- GT1
Gate Trigger Voltage(Ⅱ)
1.5
V
VD=6V, RL=10 ohm
V- GT3
Gate Trigger Voltage(Ⅲ)
1.5
V
VD=6V, RL=10 ohm
0.2
V
TJ=125℃,VD=1/2VDRM
5.0
V/µS
TJ=125℃,VD=2/3VDRM
VGD
(dv/dt)c
Non-trigger Gate Voltage
Critical Rate of Rise of Off-State
Voltage at Commutation
(di/dt)c=-3A/ms
IH
Rth(j-c)
Holding Current
Thermal Resistance
10
mA
2.8
℃/W
Junction to case
Shantou Huashan Electronic Devices Co.,Ltd.
HTP6A60
█ PERFORMANCE CURVES
Fig 2.
On-State Voltage
Gate
Voltage (V)
On-state Current [A]
Fig 1. Gate Characteristics
Gate
Current
(mA)
On-state Voltage [V]
Fig 3. Gate Trigger Voltage vs. Junction
Fig 4. On State Current vs. Maximum
Power Dissipation
Power Dissipation [W]
Temperature
Junction Temperature [℃]
RMS On-state current [A]
Fig 5. On State Current vs.
Fig 6. Surge On-State Current Rating
( Non-Repetitive )
Surge On-state Current [A]
Allowable Case Temp. [°C]
Allowable Case Temperature
RMS On-state Current [A]
Time(Cycles)
Shantou Huashan Electronic Devices Co.,Ltd.
Fig 7. Gate Trigger Current vs.
HTP6A60
Fig 8. Transient Thermal Impedance
Impedance [℃/W ]
Transient Thermal
Junction Temperature
Junction Temperature [℃]
Time(sec)
Fig 9. Gate Trigger Characteristics Test Circuit
10Ω
Test ProcedureⅠ
10Ω
Test ProcedureⅡ
10Ω
Test ProcedureⅢ