HTB1-600 HTB1-600 BI-DIRECTIONAL TRIODE THYRISTOR (TRIAC) VDRM = 600 V IT(RMS) = 1.0A FEATURES 3.T2 Symbol Repetitive Peak Off-State Voltage: 600V R.M.S On-state Current (IT(RMS)=1A) High Commutation dv/dt 2.Gate 1.T1 TO-92 1. T1 2. Gate 3. T2 General Description The TRIAC HTB1-600 is suitable for AC switching application, phase control application such as heater control, motor control, lighting control, and static switching relay. Absolute Maximum Ratings 1 2 3 (Ta=25℃) Symbol Parameter Value Units VDRM Repetitive Peak Off-State Voltage 600 V IT(RMS) R.M.S On-State Current (Ta = 95℃) 1 A ITSM Surge On-State Current (One Cycle, 50/60Hz, Peak, Non Repetitive) 9.1/10 A VGM Peak Gate Voltage 6 V IGM Peak Gate Current 0.5 A PG(AV) Average Gate Power Dissipation 0.1 W PGM Peak Gate Power Dissipation 1 W TSTG Storage Temperature Range -40 to +125 ℃ Tj Operating Temperature -40 to +125 ℃ ◎ SEMIHOW REV.1.0 Jan 2006 Symbol Parameter (Ta=25℃) Test Conditions Min Typ Max Units 1+, 1-, 3- 5 mA 3+ 1+, 1-, 3- 10 1.8 mA V 3+ 2.0 V IGT Gate Trigger Current VD=6V, RL=10Ω VGT Gate Trigger Voltage VD=6V, RL=10Ω VGD Non Trigger Gate Voltage Tj=125℃, VD=1/2VDRM 0.2 V Critical Rate of Rise of Tj=125℃, VD=2/3VDRM Off-State Voltage at (di/dt)c=-0.5A/ms Communication 2.0 V/uS (dv/dt)c IH Holding Current 4.0 VD=VDRM, Single Phase, Half Wave, IDRM Repetitive Peak OffState Current VTM Peak On-State Voltage IT=6A, Inst, Measurement Tj=125℃ mA 0.5 mA 1.6 V Thermal Characteristics S ymbol Parameter Test Conditions Min Typ Max Units RTH(j -c) Thermal Resistance Junction to Case 50 ℃/ W RTH(j -a) Thermal Resistance Junction to Ambient 120 ℃/ W ◎ SEMIHOW REV.1.0 Jan 2006 HTB1-600 Electrical Characteristics HTB1-600 Performance Curves Fig 1. Gate Characteristics Fig 2.On-State Voltage 101 On-state Current (A) Gate Voltage (V) 101 100 100 10-1 10-1 100 101 102 0.5 103 1.0 2.5 3.0 3.5 4.0 4.5 5.0 Fig 4. On State Current vs. Maximum Power Dissipation Fig 3. Gate Trigger Voltage vs. Junction Temperature 1.5 Power Dissipation (W) 10 VGT(t℃) VGT(25℃) 2.0 On-state Voltage (V) Gate Current (mA) V+GT1 V-GT1 V+GT1 V-GT3 1 1.2 0.9 0.6 0.3 0.0 0.1 -50 0 50 100 0.0 150 0.2 0.4 0.6 0.8 1.0 1.2 RMS On-State Current (A) Junction Temperature (℃) Fig 6. Surge On-State Current Rating (Non-Repetitive) Fig 5. On State Current vs. Allowable Case Temperature 12 Surge On-State Current (A) 130 Allowable Case Temp (℃) 1.5 120 110 100 90 80 70 60 50 40 10 8 6 4 2 0 0.0 0.2 0.4 0.6 0.8 RMS On-State Current (A) 1.0 1.2 100 101 102 Time (Cycles) ◎ SEMIHOW REV.1.0 Jan 2006 103 Transient Thermal Impedance (℃/W) 10 IGT(t℃) IGT(25℃) HTB1-600 Fig8. Transient Thermal Impedance Fig 7. Gate Trigger Current vs. Junction Temperature I+GT1 I-GT1 I-GT3 1 I+GT3 102 101 100 0.1 -50 0 50 100 150 10-2 10-1 Junction Temperature (℃) 100 101 102 103 Time (Sec) Fig 7. Gate Trigger Characteristics Test Circuit 10Ω 10Ω A RG A 6V RG 6V V V Test Procedure I Test Procedure II 10Ω 10Ω A 6V RG A 6V V Test Procedure III RG V Test Procedure IV ◎ SEMIHOW REV.1.0 Jan 2006