DG211B/212B Vishay Siliconix Improved Quad CMOS Analog Switches 22-V Supply Voltage Rating TTL and CMOS Compatible Logic Low On-Resistance—rDS(on): 50 Low Leakage—ID(on): 20 pA Single Supply Operation Possible Extended Temperature Range Fast Switching—tON: 120 ns Low Charge Injection—Q: 1 pC Wide Analog Signal Range Simple Logic Interface Higher Accuracy Minimum Transients Reduced Power Consumption Superior to DG211/212 Space Savings (TSSOP) Industrial Instrumentation Test Equipment Communications Systems Disk Drives Computer Peripherals Portable Instruments Sample-and-Hold Circuits The DG211B/212B analog switches are highly improved versions of the industry-standard DG211/212. These devices are fabricated in Vishay Siliconix’ proprietary silicon gate CMOS process, resulting in lower on-resistance, lower leakage, higher speed, and lower power consumption. up to 22 V, and have an improved continuous current rating of 30 mA. An epitaxial layer prevents latchup. All devices feature true bi-directional performance in the on condition, and will block signals to the supply levels in the off condition. These quad single-pole single-throw switches are designed for a wide variety of applications in telecommunications, instrumentation, process control, computer peripherals, etc. An improved charge injection compensation design minimizes switching transients. The DG211B and DG212B can handle The DG211B is a normally closed switch and the DG212B is a normally open switch. (See Truth Table.) DG211B Dual-In-Line, SOIC and TSSOP IN1 1 16 IN2 D1 2 15 D2 S1 3 14 S2 Logic V– 4 13 V+ GND 5 12 VL S4 6 11 S3 D4 7 10 D3 IN4 8 9 IN3 DG211B DG212B 0 ON OFF 1 OFF ON Logic “0” 0.8 V Logic “1” 2.4 V Top View Document Number: 70040 S-00788—Rev. H, 24-Apr-00 www.vishay.com FaxBack 408-970-5600 4-1 DG211B/212B Vishay Siliconix ORDERING INFORMATION Temp Range Package Part Number DG211BDJ 16-Pin Plastic DIP DG212BDJ DG211BDY –40 40 to 85 85_C C 16-Pin Narrow SOIC DG212BDY DG211BDQ 16-Pin TSSOP DG212BDQ ABSOLUTE MAXIMUM RATINGS Voltages Referenced to V– V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 V GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V Digital Inputsa VS, VD . . . . . . . . . . . . . . . . . . . . . . . . . . (V–) –2 V to (V+) +2 V or 30 mA, whichever occurs first Current, Any Terminal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA Peak Current, S or D (Pulsed at 1 ms, 10% duty cycle max) . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65 to 125_C Power Dissipation (Package)b 16-Pin Plastic DIPc . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 470 mW 16-Pin Narrow SOIC and TSSOPd . . . . . . . . . . . . . . . . . . . . . . . . . . . . 640 mW Notes: a. Signals on SX, DX, or INX exceeding V+ or V– will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 6.5 mW/_C above 75_C d. Derate 7.6 mW/_C above 75_C SCHEMATIC DIAGRAM (TYPICAL CHANNEL) V+ SX VL Level Shift/ Drive INX V– V+ DX GND V– FIGURE 1. www.vishay.com S FaxBack 408-970-5600 4-2 Document Number: 70040 S-00788—Rev. H, 24-Apr-00 DG211B/212B Vishay Siliconix D Suffix Test Conditions Unless Otherwise Specified Parameter V+ = 15 V, V– = –15 V VL = 5 V, VIN = 2.4 V, 0.8 Ve –40 to 85_C Tempa Minb VANALOG Full –15 rDS(on) Room Full 45 Room 2 Symbol Typc Maxb Unit 15 V Analog Switch Analog Signal Ranged Drain-Source On-Resistance rDS(on) Match VD = 10 V,, IS = 1 mA DrDS(on) 85 Source Off Leakage Current IS(off) VS = 14 V, VD = 14 V Room Full –0.5 –5 0.01 0.5 5 Drain Off Leakage Current ID(off) VD = 14 V, VS = 14 V Room Full –0.5 –5 0.01 0.5 5 Drain On Leakage Current ID(on) VS = VD = 14 V Room Full –0.5 –10 0.02 0.5 10 2.4 W nA A Digital Control Input Voltage High VINH Full Input Voltage Low VINL Full Input Current Input Capacitance IINH or IINL V VINH or VINL CIN Full 0.8 –1 Room 1 5 mA pF Dynamic Characteristics Turn-On Time tON Turn-Off Time tOFF Charge Injection Q Source-Off Capacitance CS(off) Drain-Off Capacitance CD(off) Channel On Capacitance CD(on) Off Isolation OIRR Channel-to-Channel Crosstalk XTALK VS =10 V See Figure S Fi 2 Room 300 Room 200 CL = 1000 pF, Vg= 0 V, Rg = 0 W Room 1 Room 5 Room 5 VD = VS = 0 V, f = 1 MHz Room 16 CL = 15 p pF,, RL = 50 W VS = 1 VRMS, f = 100 kH kHz Room 90 Room 95 VS = 0 V, f = 1 MHz ns pC pF F dB Power Supply Room Full Positive Supply Current I+ Negative Supply Current I– Room Full Logic Supply Current IL Room Full VOP Full VIN = 0 or 5 V Power Supply Range for Continuous Operation Document Number: 70040 S-00788—Rev. H, 24-Apr-00 10 50 –10 –50 mA A 10 50 4.5 22 V www.vishay.com S FaxBack 408-970-5600 4-3 DG211B/212B Vishay Siliconix SPECIFICATIONS FOR SINGLE SUPPLY D Suffix Test Conditions Unless Otherwise Specified –40 to 85_C V+ = 12 V, V– = 0 V VL = 5 V, VIN = 2.4 V, 0.8 Ve Tempa Minb VANALOG Full 0 rDS(on) VD = 3 V, 8 V, IS = 1 mA Room Full Turn-On Time tON Room 300 Turn-Off Time tOFF VS = 8 V See Figure S Fi 2 Room 200 CL = 1 nF, Vgen= 6 V, Rgen = 0 W Room Parameter Symbol Typc Maxb Unit 12 V 90 160 200 W Analog Switch Analog Signal Ranged Drain-Source On-Resistance Dynamic Characteristics Charge Injection Q ns 4 pC Power Supply Room Full Positive Supply Current I+ Negative Supply Current I– Room Full Logic Supply Current IL Room Full VOP Full VIN = 0 or 5 V Power Supply Range for Continuous Operation 10 50 –10 –50 mA A 10 50 4.5 25 V Notes: a. Room = 25_C, Full = as determined by the operating temperature suffix. b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. Guaranteed by design, not subject to production test. e. VIN = input voltage to perform proper function. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) rDS(on) vs. VD and Power Supply Voltages rDS(on) vs. VD and Temperature 100 r DS(on)– Drain-Source On-Resistance ( W ) r DS(on)– Drain-Source On-Resistance ( W ) 110 100 90 5 V 80 70 10 V 60 15 V 50 40 20 V 30 20 10 –20 –16 –12 –8 –4 0 4 8 VD – Drain Voltage (V) www.vishay.com S FaxBack 408-970-5600 4-4 12 16 20 90 V+ = 15 V V– = –15 V 80 70 60 125_C 50 85_C 40 25_C 30 –55_C 20 10 0 –15 –10 –5 0 5 10 15 VD – Drain Voltage (V) Document Number: 70040 S-00788—Rev. H, 24-Apr-00 DG211B/212B Vishay Siliconix _ rDS(on) vs. VD and Single Power Supply Voltages Leakage Currents vs. Analog Voltage 40 V+ = 5 V 225 V+ = 22 V V– = –22 V TA = 25_C 30 200 20 175 150 I S,I D – Current (pA) r DS(on)– Drain-Source On-Resistance ( ) 250 7V 125 10 V 100 12 V 15 V 75 ID(on) 10 IS(off), ID(off) 0 –10 –20 50 –30 25 –40 –20 0 0 2 4 6 8 10 12 14 16 –15 –10 VD – Drain Voltage (V) 0 5 10 15 20 VANALOG – Analog Voltage (V) QS, QD – Charge Injection vs. Analog Voltage Leakage Current vs. Temperature 30 1 nA V+ = 15 V V– = –15 V VS, VD = 14 V 20 100 pA 10 Q – Charge (pC) I S,I D – Current –5 IS(off), ID(off) 0 V+ = 15 V V– = –15 V V+ = 12 V V– = 0 V –10 10 pA –20 1 pA –55 –35 –15 5 25 45 65 85 –30 –15 105 125 –10 –5 0 5 10 15 VANALOG – Analog Voltage (V) Temperature (_C) Off Isolation vs. Frequency 120 V+ = +15 V V– = –15 V 110 100 OIRR (dB) 90 RL = 50 80 70 60 50 40 10 k 100 k 1M 10 M f – Frequency (Hz) Document Number: 70040 S-00788—Rev. H, 24-Apr-00 www.vishay.com S FaxBack 408-970-5600 4-5 DG211B/212B Vishay Siliconix +15 V V+ D S VS = +2 V Logic Input VO 3V tr <20 ns tf <20 ns 50% 0V tOFF IN V– GND CL 35 pF RL 1 kW 3V 90% Switch Output –15 V VO tON RL VO = VS RL + rDS(on) FIGURE 2. Switching Time C +15 V +15 V C V+ S1 VS V+ S VS VO D D1 Rg = 50 W 50 W IN1 Rg = 50 W 0V, 2.4 V RL IN 0V, 2.4 V S2 NC GND V– C RL IN2 0V, 2.4 V GND XTALK Isolation = 20 log VS VO FIGURE 3. Off Isolation VO –15 V FIGURE 4. Channel-to-Channel Crosstalk DVO VO V+ S D IN Vg VO CL 1000 pF 3V GND C VS +15 V Rg V– C = RF bypass –15 V Off Isolation = 20 log VO D2 INX ON OFF ON V– DVO = measured voltage error due to charge injection The charge injection in coulombs is Q = CL x DVO –15 V FIGURE 5. Charge Injection www.vishay.com FaxBack 408-970-5600 4-6 Document Number: 70040 S-00788—Rev. H, 24-Apr-00 DG211B/212B Vishay Siliconix +15 V +5V VL V+ Logic Input Low = Sample High = Hold 1 kW +15 V DG211B +15 V –15 V – J202 LM101A VIN 2N4400 + 5 MW 50 pF 5.1 MW 200 W VOUT 1000 pF V– J507 J500 30 pF –15 V Aquisition Time = 25 ms Aperature Time = 1 ms Sample to Hold Offset = 5 mV Droop Rate = 5 mV/s –15 V FIGURE 6. Sample-and-Hold +15 V 160 V1 C4 fC3 Select TTL Control fC2 Select fC1 Select 150 pF 120 C3 1500 pF Voltage Gain – dB fC4 Select C2 0.015 mF C1 0.15 mF 80 fC1 fC2 fC3 fC4 40 fL1 0 V– DG211B fL2 fL3 fL4 GND –40 1 10 100 –15 V 1k R3 = 1 MW +15 V –15 V – R1 = 10 kW LM101A + R2 = 10 kW VOUT AL (Voltage Gain Below Break Frequency) = 1 fC (Break Frequency) = 2pR3CX 100 k 1M Max Attenuation = rDS(on) 10 kW R3 R1 = 100 (40 dB) 1 2pR1CX fL (Unity Gain Frequency) = 30 pF 10 k Frequency – Hz –47 dB FIGURE 7. Active Low Pass Filter with Digitally Selected Break Frequency Document Number: 70040 S-00788—Rev. H, 24-Apr-00 www.vishay.com FaxBack 408-970-5600 4-7 DG211B/212B Vishay Siliconix VIN1 +5 V +15 V VL V+ 30 pF +15 V + LM101A VIN2 – +15 V DG419 –15 V RF1 18 k RF2 9.9 k RF3 100 k RG1 2 k RG2 100 RG3 100 DG212B CH GND V– –15 V Gain = Gain 1 (x1) RF + RG Gain 2 (x10) RG Gain 3 (x100) Gain 4 (x1000) V– GND Logic High = Switch On –15 V FIGURE 8. www.vishay.com FaxBack 408-970-5600 4-8 A Precision Amplifier with Digitally Programable Input and Gains Document Number: 70040 S-00788—Rev. H, 24-Apr-00