TECHNICAL DATA PNP HIGH VOLTAGE SILICON TRANSISTOR Qualified per MIL-PRF-19500/397 Devices Qualified Level 2N3743 2N4930 JAN, JANTX JANTXV 2N4931 MAXIMUM RATINGS Ratings Sym Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation VCEO VCBO VEBO IC @TA = +250C 1 @TC = +250C 2 Operating & Storage Junction Temperature Range PT TJ, Tstg 2N3743 2N4930 2N4931 Unit 300 300 200 250 200 250 5.0 200 1.0 5.0 -65 to +200 Vdc Vdc Vdc mAdc W W 0 C THERMAL CHARACTERISTICS Characteristics Symbol Thermal Resistance Junction-to-Case RθJC 1) Derate linearly 5.71 mW/0C for TA > +250C 2) Derate linearly 28.6 mW/0C for TC > +250C Max. 35 TO-39* (TO-205AD) Unit C/W 0 *See appendix A for package outline ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted) Characteristics Symbol Min. V(BR)CEO 300 200 250 V(BR)CBO 300 200 250 Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 1.0 mAdc Collector-Emitter Breakdown Voltage IC = 100 µAdc Emitter-Base Breakdown Voltage IE = 100 µAdc Collector-Base Cutoff Current VCB = 250 Vdc VCB = 150 Vdc VCB = 200 Vdc 2N3743 2N4930 2N4931 2N3743 2N4930 2N4931 2N3743 2N4930 2N4931 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 Vdc Vdc V(BR)EBO 5.0 Vdc ICBO 250 250 250 ηAdc 120101 Page 1 of 2 2N3743, 2N4930, 2N4931, JAN SERIES ELECTRICAL CHARACTERISTICS (con’t) Characteristics Emitter-Base Cutoff Current VEB = 4.0 Vdc ON CHARACTERISTICS Symbol Min. IEBO Max. Unit 150 ηAdc (3) Forward-Current Transfer Ratio IC = 0.1 mAdc, VCE = 10 Vdc IC = 1.0 mAdc, VCE = 10 Vdc IC = 10 mAdc, VCE = 10 Vdc IC = 30 mAdc, VCE = 10 Vdc IC = 50 mAdc, VCE = 20 Vdc Collector-Emitter Saturation Voltage IC = 30 mAdc, IB = 3.0 mAdc IC = 10 mAdc, IB = 1.0 mAdc Base-Emitter Saturation Voltage IC = 10 mAdc, IB = 1.0 mAdc IC = 30 mAdc, IB = 3.0 mAdc hFE 30 40 40 50 30 200 VCE(sat) 1.2 1.0 Vdc VBE(sat) 1.0 1.2 Vdc DYNAMIC CHARACTERISTICS Magnitude of Common Emitter Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 10 mAdc, VCE = 20 Vdc, f = 20 MHz Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz Output Capacitance VCB = 20 Vdc, IE = 0, f ≥ 0.1 MHz Input Capacitance VEB = 1.0 Vdc, IC = 0, f ≥ 0.1 MHz hfe 2.0 8.0 hfe 30 300 Cobo 15 pF Cibo 400 pF SAFE OPERATING AREA DC Tests TC = +250C, 1 Cycle, t ≥ 1.0 s Test 1 VCE = 20 Vdc, IC = 50 mAdc All Types Test 2 VCE = 100 Vdc, IC = 10 mAdc All Types Test 3 VCE = 300 Vdc, IC = 3.3 mAdc 2N3743 VCE = 200 Vdc, IC = 5.0 mAdc 2N4930 VCE = 250 Vdc, IC = 4.0 mAdc 2N4931 (3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%. 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 2 of 2