MRF581 MRF581G MRF581A MRF581AG *G Denotes RoHS Compliant, Pb free Terminal Finish RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • Low Noise - 2.5 dB @ 500 MHZ Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz Ftau - 5.0 GHz @ 10v, 75mA Cost Effective MacroX Package Macro X DESCRIPTION: Designed for high current, low power, low noise, amplifiers up to 1.0 GHz. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter MRF581 MRF581A Unit VCEO Collector-Emitter Voltage 18 15 Vdc VCBO Collector-Base Voltage 30 Vdc VEBO Emitter-Base Voltage 2.5 Vdc IC Collector Current 200 mA Thermal Data P P D Total Device Dissipation @ TC = 50ºC Derate above 50ºC 2.5 25 Watts mW/ ºC D Total Device Dissipation @ TC = 25ºC Derate above 25ºC 1.25 10 Watts mW/ ºC -65 to +150 ºC 150 ºC Tstg TJmax Storage Junction Temperature Range Maximum Junction Temperature Revision A- December 2008 Microsemi reserves the right to change, without notice, the specifications and information contained herein Visit our website at www.microsemi.com or contact our factory direct. MRF581 MRF581G MRF581A MRF581AG ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC (off) Symbol BVCEO BVCBO BVEBO ICBO IEBO Value Test Conditions Unit Min. Typ. Max. 18 15 - - Vdc Collector-Base Breakdown Voltage (IC = 1.0 mAdc, IE = 0) 30 - - Vdc Emitter-Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) 2.5 - - Vdc Collector Cutoff Current (VCB = 15 Vdc, VBE = 0 Vdc) - - 0.1 mA Emitter Cutoff Current (Vbe = 2.5 Vdc) - - 0.1 mA 50 90 - 200 250 - Collector-Emitter Breakdown Voltage (IC = 5.0 mAdc, IB = 0) MRF581 MRF581A (on) HFE DC Current Gain (IC = 50 mAdc, VCE = 5.0 Vdc) MRF581 MRF581A DYNAMIC Symbol COB Ftau Test Conditions Value Unit Min. Typ. Max. Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) - 2.0 3.0 pF Current-Gain Bandwidth Product (IC = 75 mAdc, VCE = 10 Vdc, f = 1.0 GHz) - 5.0 - GHz Microsemi reserves the right to change, without notice, the specifications and information contained herein Visit our website at www.microsemi.com or contact our factory direct. MRF581 MRF581G MRF581A MRF581AG FUNCTIONAL Symbol Value Test Conditions Unit Min. Typ. Max. Noise Figure (50ohms) (IC = 50 mAdc, VCE = 10 Vdc, f = 0.5 GHz) - 3.0 3.5 NF Power Gain @ NFmin (IC = 50 mAdc, VCE = 10 Vdc, f = 0.5 GHz) 13 15.5 U max Maximum Unilateral Gain (1) IC = 50 mAdc, VCE = 10 Vdc, f = 500 MHz - 17.8 - dB Maximum Stable Gain IC = 50 mAdc, VCE = 10 Vdc, f = 500 MHz - 20 - dB Insertion Gain IC = 50 mAdc, VCE = 10 Vdc, f = 500 MHz 14 15 - dB NF G G MSG 2 |S21| dB dB Table 1. Common Emitter S-Parameters, @ VCE = 10 V, IC = 50 mA f S11 S21 S12 S22 (MHz) |S11| ∠φ |S21| ∠φ |S12| ∠φ |S22| 100 .610 -137 23.8 116 .026 46 .522 -78 200 .659 -161 13.2 98 .033 47 .351 -106 300 .671 -171 9.0 89 .040 51 .304 -120 400 .675 -178 6.8 83 .047 55 .292 -128 500 .677 176 5.5 77 .055 58 .293 -132 600 .678 172 4.6 72 .064 61 .299 -134 700 .677 168 4.0 68 .073 62 .306 -135 800 .679 184 3.5 64 .082 63 .314 -136 900 .678 160 3.1 60 .092 64 .322 -138 1000 .682 156 2.8 56 .102 65 .311 -139 Microsemi reserves the right to change, without notice, the specifications and information contained herein Visit our website at www.microsemi.com or contact our factory direct. ∠φ MRF581 MRF581G MRF581A MRF581AG C1, C4, C5, C6, C8, C9 — 1000 pF, Chip Capacitor C7, C10 — 10 µF, Tantalum Capacitor RFC — VK–200, Ferroxcube TL1, TL7, TL8 — Microstrip 0.162, x 0.600, TL3 — Microstrip 0.162, x 0.800, TL5 — Microstrip 0.120, x 0.440, TL9, TL10 — Microstrip 0.025, x 4.250, Board Material — 0.0625, Thick Glass Teflon ε r = 2.55 C2, C3 — 1.0–10 pF, Johanson Capacitor R1 — 1.0 kΩ Res. FB — Ferrite Bead, Ferroxcube, 56–590–65/3B TL2 — Microstrip 0.162, x 1.000, TL4 — Microstrip 0.162, x 0.440, TL6 — Microstrip 0.120, x 1.160, Figure 1. Minimum Noise Figure and Gain @ Minimum Noise Figure. Microsemi reserves the right to change, without notice, the specifications and information contained herein Visit our website at www.microsemi.com or contact our factory direct. MRF581 MRF581G MRF581A MRF581AG 20 400 20 400 16 500 16 500 16 330 18 1000 12 50 TO-39 0.5 0.5 1 1 1.5 1.5 10 13 10 10 11 11 65 7.5 16 150 60 12.5 16 150 45 28 30 400 45 28 30 400 50 12.5 16 400 50 12.5 16 400 MACRO X MRF559 NPN 870 0.5 MACRO X MRF559 NPN 870 0.5 SO-8 MRF8372,R1,R2 NPN 870 0.75 POWER MACRO MRF557 NPN 870 1.5 POWER MACRO MRF557T NPN 870 1.5 6.5 9.5 8 8 8 70 65 55 55 55 7.5 12.5 12.5 12.5 12.5 16 16 16 16 16 150 150 200 400 400 10 15 12 1200 3.4 30 15 3.4 30 15 15 1300 17 900 1 12 50 13 30 400 30 400 4.5 1.5 6 TO-72 2N2857 NPN 300 5.5 50 6 1600 1 15 40 TO-39 MRF517 NPN 300 7.5 50 15 5.5 4600 3 25 150 TO-72 MRF904 NPN 450 1.5 5 6 11 4000 1 15 30 TO-72 2N6304 NPN 450 5 2 5 14 1400 1 15 50 BFR91 NPN 500 1.9 2 5 BFR96 NPN 500 2 10 10 MRF5812, R1, R2 NPN 500 2 50 10 15.5 17.8 5000 15 200 50 10 14 15 5000 15 200 15 MACRO T SO-8 MACRO X 11 16.5 5000 1 14.5 500 2.6 12 35 15 100 MRF581A NPN 500 2 Macro BFR90 NPN 500 2.4 2 10 18 5000 TO-72 BFY90 NPN 500 2.5 2 5 20 1300 15 50 TO-72 MRF914 NPN 500 2.5 5 10 15 4500 12 40 2.5 50 10 MACRO X MRF581 NPN 500 TO-39 MRF586 NPN 500 MACRO X MRF951 NPN 1000 1.3 MACRO X MRF571 NPN 1000 1.5 10 MACRO T BFR91 NPN 1000 2.5 2 MACRO T BFR90 NPN 1000 2 10 10 TO-39 MRF545 PNP TO-39 MRF544 NPN 3 3 15 17.8 5000 90 15 11 14.5 4500 5 6 14 6 10 5 8 1 15 30 16 200 2.2 17 200 17 8000 0.45 10 100 11 5000 1 12 35 12.5 5000 1 15 30 2 70 400 8000 14 1400 13.5 1500 1 10 70 70 400 RF (LNA / General Purpose) Selection Guide 1 1 2 2 4 8 5 1 4 3 3 Macro X 20 400 NPN 200 Low Cost RF Plastic Package Options Macro T 3.5 11.4 1000 2N5179 RF (Low Power PA / General Purpose) Selection Guide 4 Ccb(pF) BVCEO IC max (mA) NPN 200 TO-72 3 Ftau (MHz) Gu Max (dB) NF (dB) NF IC (mA) NF VCE GN (dB) NPN 200 MACRO T MACRO X MRF559 MACRO X MRF559 TO-39 2N3866A SO-8 MRF3866, R1, R2 POWER MACRO MRF555 POWER MACRO MRF555T Type 2N5109 MRF5943C MRF5943, R1, R2 NPN 200 TO-39 SO-8 Freq (MHz) Device Packag 512 512 400 400 470 470 12 12 12.5 12.5 12.5 12.5 6 IC max (mA) NPN NPN NPN NPN NPN NPN 60 50 60 50 50 50 BVCEO 18 10 11.5 11.5 11.5 7.8 20 Efficiency (%) 175 0.15 175 1 175 1.5 175 1.5 175 1.75 175 3 200 GPE VCC GPE (dB) MRF4427, R2 2N4427 MRF553 MRF553T MRF607 2N6255 2N5179 GPE Freq (MHz) NPN NPN NPN NPN NPN NPN NPN Type Pout (watts) SO-8 TO-39 POWER MACRO POWER MACRO TO-39 TO-39 TO-72 Device Package RF Low Power PA, LNA, and General Purpose Discrete Selector Guide Power SO-8 Microsemi reserves the right to change, without notice, the specifications and information contained herein Visit our website at www.microsemi.com or contact our factory direct. MRF581 MRF581G MRF581A MRF581AG PIN 1. COLLECTOR 2. EMITTER 3. BASE 4. EMITTER 1. 2. 4. 3. Microsemi reserves the right to change, without notice, the specifications and information contained herein Visit our website at www.microsemi.com or contact our factory direct.