ADPOW MRF581A

140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
MRF581/MRF581A
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
Features
•
•
•
•
Low Noise - 2.5 dB @ 500 MHZ
Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz
Ftau - 5.0 GHz @ 10v, 75mA
Cost Effective MacroX Package
Macro X
DESCRIPTION: Designed for high current, low power, low noise, amplifiers up to 1.0 GHz.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
VCEO
Parameter
Collector-Emitter Voltage
MRF581
18
MRF581A
15
Unit
Vdc
VCBO
Collector-Base Voltage
30
Vdc
VEBO
Emitter-Base Voltage
2.5
Vdc
IC
Collector Current
200
mA
Thermal Data
P
Total Device Dissipation @ TC = 50º C
Derate above 50º C
2.5
25
Watts
mW/ ºC
P
Total Device Dissipation @ TC = 25º C
Derate above 25º C
1.25
10
Watts
mW/ ºC
-65 to +150
ºC
150
ºC
D
D
Tstg
TJmax
Storage Junction Temperature Range
Maximum Junction Temperature
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
MRF581/MRF581A
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC
(off)
Symbol
BVCEO
BVCBO
BVEBO
ICBO
IEBO
Value
Test Conditions
Unit
Min.
18
15
Typ.
Max.
-
-
Vdc
Collector-Base Breakdown Voltage
(IC = 1.0 mAdc, IE = 0)
30
-
-
Vdc
Emitter-Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0)
2.5
-
-
Vdc
Collector Cutoff Current
(VCB = 15 Vdc, VBE = 0 Vdc)
-
-
0.1
mA
Emitter Cutoff Current
(VCE = 2.0 Vdc, VBE = 0 Vdc)
-
-
0.1
mA
50
90
-
200
250
-
Collector-Emitter Breakdown Voltage
(IC = 5.0 mAdc, IB = 0)
MRF581
MRF581A
(on)
HFE
DC Current Gain
(IC = 50 mAdc, VCE = 5.0 Vdc)
MRF581
MRF581A
DYNAMIC
Symbol
COB
Ftau
Test Conditions
Value
Unit
Min.
Typ.
Max.
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
-
2.0
3.0
pF
Current-Gain Bandwidth Product
(IC = 75 mAdc, VCE = 10 Vdc, f = 1.0 GHz)
-
5.0
-
GHz
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
MRF581/MRF581A
FUNCTIONAL
Symbol
NFmin
G
Value
Test Conditions
Min.
Minimum Noise Figure
(IC = 50 mAdc, VCE = 10 Vdc, f = 0.5 GHz)
MRF581
MRF581A
-
Typ.
2.5
2.0
Unit
Max.
3.0
3.0
dB
NF
Power Gain @ NFmin
(IC = 50 mAdc, VCE = 10 Vdc, f = 0.5 GHz)
13
15.5
U max
Maximum Unilateral Gain (1)
IC = 50 mAdc, VCE = 10 Vdc, f = 500 MHz
-
17.8
-
dB
Maximum Stable Gain
IC = 50 mAdc, VCE = 10 Vdc, f = 500 MHz
-
20
-
dB
Insertion Gain
IC = 50 mAdc, VCE = 10 Vdc, f = 500 MHz
14
15
-
dB
G
MSG
2
|S21|
dB
Table 1. Common Emitter S-Parameters, @ VCE = 10 V, IC = 50 mA
f
S11
S21
S12
S22
(MHz)
|S11|
∠φ
|S21|
∠φ
|S12|
∠φ
|S22|
100
.610
-137
23.8
116
.026
46
.522
-78
200
.659
-161
13.2
98
.033
47
.351
-106
300
.671
-171
9.0
89
.040
51
.304
-120
400
.675
-178
6.8
83
.047
55
.292
-128
500
.677
176
5.5
77
.055
58
.293
-132
600
.678
172
4.6
72
.064
61
.299
-134
700
.677
168
4.0
68
.073
62
.306
-135
800
.679
184
3.5
64
.082
63
.314
-136
900
.678
160
3.1
60
.092
64
.322
-138
1000
.682
156
2.8
56
.102
65
.311
-139
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
∠φ
MRF581/MRF581A
C1, C4, C5, C6, C8, C9 — 1000 pF, Chip Capacitor C2, C3 — 1.0–10 pF, Johanson Capacitor
C7, C10 — 10 µF, Tantalum Capacitor
R1 — 1.0 kΩ Res.
RFC — VK–200, Ferroxcube
FB — Ferrite Bead, Ferroxcube, 56–590–65/3B
TL1, TL7, TL8 — Microstrip 0.162, x 0.600,
TL2 — Microstrip 0.162, x 1.000,
TL3 — Microstrip 0.162, x 0.800,
TL4 — Microstrip 0.162, x 0.440,
TL5 — Microstrip 0.120, x 0.440,
TL6 — Microstrip 0.120, x 1.160,
TL9, TL10 — Microstrip 0.025, x 4.250,
Board Material — 0.0625, Thick Glass Teflon ε r = 2.55
Figure 1. Minimum Noise Figure and Gain @ Minimum Noise Figure.
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
MRF581/MRF581A
MA C R O X
MRF559
NPN
NPN
NPN
NPN
NPN
NPN
NPN
16
150
200
3
10
15
12
1200
200
3.4
30
15
11.4
1000
30
400
MRF5943, R1, R2 NPN
200
3.4
30
15
15
1300
30
400
SO-8
TO-72
2N5179
NPN
200
4.5
1.5
17
900
1
12
2N2857
NPN
300
5.5
50
6
13
1600
1
15
40
NPN
300
7.5
50
15
5.5
4600
3
25
150
TO-72
MRF904
NPN
450
1.5
5
6
11
4000
1
15
30
TO-72
2N6304
NPN
450
5
2
5
14
1400
1
15
50
MACRO T
BFR91
NPN
500
1.9
2
5
16.5
5000
1
12
35
MACRO T
BFR96
NPN
500
2
10
10
14.5
500
2.6
15
100
SO-8
MRF5812, R1, R2 NPN
500
2
50
10
15.5
17.8
5000
15
200
NPN
500
2
50
10
14
15
5000
15
200
BFR90
NPN
500
2.4
2
10
15
18
5000
15
30
BFY90
NPN
500
2.5
2
5
20
1300
15
NPN
500
2.5
5
10
15
4500
12
40
NPN
500
2.5
50
10
15
17.8
5000
16
200
500
17
200
0.5
13
60
12.5
16
150
1
10
45
28
30
400
MRF3866, R1, R2 NPN 400
1
10
45
28
30
400
TO-72
400
TO-72
MRF914
MACRO X
MRF581
POWER MACRO
MRF555T
NPN 470
1.5
11
50
12.5
50
12.5
16
16
400
MA C R O X
MRF559
NPN 870
0.5
6.5
70
7.5
16
150
MA C R O X
MRF559
NPN 870
0.5
9.5
65
12.5
16
150
SO-8
MRF8372,R1,R2
NPN 870
0.75
8
55
12.5
16
200
POWER MACRO
MRF557
NPN 870
1.5
8
55
12.5
16
400
POWER MACRO
MRF557T
NPN 870
1.5
8
55
12.5
16
400
Macro
11
TO-39
MRF586
NPN
MACRO X
MRF951
NPN 1 0 0 0
MACRO X
MRF571
MACRO T
BFR91
MACRO T
BFR90
NPN 1 0 0 0
TO-39
MRF545
PNP
TO-39
MRF544
NPN
1
3
90
15
11
14.5
4500
2.2
5
6
14
17
8000
0.45
NPN 1 0 0 0
1.5
10
6
10
8000
1
10
70
NPN 1 0 0 0
2.5
2
5
8
11
5000
1
12
35
3
2
10
10
12.5 5 0 0 0
1
15
30
2
70 400
14
1400
13.5 1500
2
2
4
2
1
3
3
Macro T
8
1
Macro X
Power Macro
SO-8
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
50
1.3
Low Cost RF Plastic Package Options
4
1
10 100
70 400
RF (LNA / General Purpose) Selection Guide
RF (Low Power PA / General Purpose) Selection Guide
50
MRF581A
NPN 512
11
400
MRF517
NPN 400
1.5
20
TO-39
MACRO X
6
3.5
TO-72
MRF559
NPN 470
Ccb(pF)
BVCEO
IC max (mA)
NPN
NPN
2N3866A
MRF555
Gu Max (dB)
2N5109
MRF5943C
TO-39
POWER MACRO
Ftau (MHz)
TO-39
TO-39
MA C R O X
SO-8
NF (dB)
NF IC (mA)
NF VCE
GN (dB)
Type
7.5
Freq (MHz)
65
0.5
20 400
20 400
16 500
16 500
16 330
18 1000
12 50
Device
10
NPN 512
12
12
12.5
12.5
12.5
12.5
6
Package
60
50
60
50
50
50
IC max (mA)
18
10
11.5
11.5
11.5
7.8
20
GPE VCC
175 0.15
175
1
175 1.5
175 1.5
175 1.75
175
3
200
BVCEO
Efficiency (%)
GPE Freq (MHz)
GPE (dB)
MRF4427, R2
2N4427
MRF553
MRF553T
MRF607
2N6255
2N5179
Pout (watts)
SO-8
TO-39
POWER MACRO
POWER MACRO
TO-39
TO-39
TO-72
Type
Device
Package
RF Low Power PA, LNA, and General Purpose Discrete Selector Guide
5
MRF581/MRF581A
PIN 1. COLLECTOR
2. EMITTER
3. BASE
4. EMITTER
1.
2.
4.
3.
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.