140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MRF581/MRF581A RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • Low Noise - 2.5 dB @ 500 MHZ Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz Ftau - 5.0 GHz @ 10v, 75mA Cost Effective MacroX Package Macro X DESCRIPTION: Designed for high current, low power, low noise, amplifiers up to 1.0 GHz. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO Parameter Collector-Emitter Voltage MRF581 18 MRF581A 15 Unit Vdc VCBO Collector-Base Voltage 30 Vdc VEBO Emitter-Base Voltage 2.5 Vdc IC Collector Current 200 mA Thermal Data P Total Device Dissipation @ TC = 50º C Derate above 50º C 2.5 25 Watts mW/ ºC P Total Device Dissipation @ TC = 25º C Derate above 25º C 1.25 10 Watts mW/ ºC -65 to +150 ºC 150 ºC D D Tstg TJmax Storage Junction Temperature Range Maximum Junction Temperature Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. MRF581/MRF581A ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC (off) Symbol BVCEO BVCBO BVEBO ICBO IEBO Value Test Conditions Unit Min. 18 15 Typ. Max. - - Vdc Collector-Base Breakdown Voltage (IC = 1.0 mAdc, IE = 0) 30 - - Vdc Emitter-Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) 2.5 - - Vdc Collector Cutoff Current (VCB = 15 Vdc, VBE = 0 Vdc) - - 0.1 mA Emitter Cutoff Current (VCE = 2.0 Vdc, VBE = 0 Vdc) - - 0.1 mA 50 90 - 200 250 - Collector-Emitter Breakdown Voltage (IC = 5.0 mAdc, IB = 0) MRF581 MRF581A (on) HFE DC Current Gain (IC = 50 mAdc, VCE = 5.0 Vdc) MRF581 MRF581A DYNAMIC Symbol COB Ftau Test Conditions Value Unit Min. Typ. Max. Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) - 2.0 3.0 pF Current-Gain Bandwidth Product (IC = 75 mAdc, VCE = 10 Vdc, f = 1.0 GHz) - 5.0 - GHz Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. MRF581/MRF581A FUNCTIONAL Symbol NFmin G Value Test Conditions Min. Minimum Noise Figure (IC = 50 mAdc, VCE = 10 Vdc, f = 0.5 GHz) MRF581 MRF581A - Typ. 2.5 2.0 Unit Max. 3.0 3.0 dB NF Power Gain @ NFmin (IC = 50 mAdc, VCE = 10 Vdc, f = 0.5 GHz) 13 15.5 U max Maximum Unilateral Gain (1) IC = 50 mAdc, VCE = 10 Vdc, f = 500 MHz - 17.8 - dB Maximum Stable Gain IC = 50 mAdc, VCE = 10 Vdc, f = 500 MHz - 20 - dB Insertion Gain IC = 50 mAdc, VCE = 10 Vdc, f = 500 MHz 14 15 - dB G MSG 2 |S21| dB Table 1. Common Emitter S-Parameters, @ VCE = 10 V, IC = 50 mA f S11 S21 S12 S22 (MHz) |S11| ∠φ |S21| ∠φ |S12| ∠φ |S22| 100 .610 -137 23.8 116 .026 46 .522 -78 200 .659 -161 13.2 98 .033 47 .351 -106 300 .671 -171 9.0 89 .040 51 .304 -120 400 .675 -178 6.8 83 .047 55 .292 -128 500 .677 176 5.5 77 .055 58 .293 -132 600 .678 172 4.6 72 .064 61 .299 -134 700 .677 168 4.0 68 .073 62 .306 -135 800 .679 184 3.5 64 .082 63 .314 -136 900 .678 160 3.1 60 .092 64 .322 -138 1000 .682 156 2.8 56 .102 65 .311 -139 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. ∠φ MRF581/MRF581A C1, C4, C5, C6, C8, C9 — 1000 pF, Chip Capacitor C2, C3 — 1.0–10 pF, Johanson Capacitor C7, C10 — 10 µF, Tantalum Capacitor R1 — 1.0 kΩ Res. RFC — VK–200, Ferroxcube FB — Ferrite Bead, Ferroxcube, 56–590–65/3B TL1, TL7, TL8 — Microstrip 0.162, x 0.600, TL2 — Microstrip 0.162, x 1.000, TL3 — Microstrip 0.162, x 0.800, TL4 — Microstrip 0.162, x 0.440, TL5 — Microstrip 0.120, x 0.440, TL6 — Microstrip 0.120, x 1.160, TL9, TL10 — Microstrip 0.025, x 4.250, Board Material — 0.0625, Thick Glass Teflon ε r = 2.55 Figure 1. Minimum Noise Figure and Gain @ Minimum Noise Figure. Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. MRF581/MRF581A MA C R O X MRF559 NPN NPN NPN NPN NPN NPN NPN 16 150 200 3 10 15 12 1200 200 3.4 30 15 11.4 1000 30 400 MRF5943, R1, R2 NPN 200 3.4 30 15 15 1300 30 400 SO-8 TO-72 2N5179 NPN 200 4.5 1.5 17 900 1 12 2N2857 NPN 300 5.5 50 6 13 1600 1 15 40 NPN 300 7.5 50 15 5.5 4600 3 25 150 TO-72 MRF904 NPN 450 1.5 5 6 11 4000 1 15 30 TO-72 2N6304 NPN 450 5 2 5 14 1400 1 15 50 MACRO T BFR91 NPN 500 1.9 2 5 16.5 5000 1 12 35 MACRO T BFR96 NPN 500 2 10 10 14.5 500 2.6 15 100 SO-8 MRF5812, R1, R2 NPN 500 2 50 10 15.5 17.8 5000 15 200 NPN 500 2 50 10 14 15 5000 15 200 BFR90 NPN 500 2.4 2 10 15 18 5000 15 30 BFY90 NPN 500 2.5 2 5 20 1300 15 NPN 500 2.5 5 10 15 4500 12 40 NPN 500 2.5 50 10 15 17.8 5000 16 200 500 17 200 0.5 13 60 12.5 16 150 1 10 45 28 30 400 MRF3866, R1, R2 NPN 400 1 10 45 28 30 400 TO-72 400 TO-72 MRF914 MACRO X MRF581 POWER MACRO MRF555T NPN 470 1.5 11 50 12.5 50 12.5 16 16 400 MA C R O X MRF559 NPN 870 0.5 6.5 70 7.5 16 150 MA C R O X MRF559 NPN 870 0.5 9.5 65 12.5 16 150 SO-8 MRF8372,R1,R2 NPN 870 0.75 8 55 12.5 16 200 POWER MACRO MRF557 NPN 870 1.5 8 55 12.5 16 400 POWER MACRO MRF557T NPN 870 1.5 8 55 12.5 16 400 Macro 11 TO-39 MRF586 NPN MACRO X MRF951 NPN 1 0 0 0 MACRO X MRF571 MACRO T BFR91 MACRO T BFR90 NPN 1 0 0 0 TO-39 MRF545 PNP TO-39 MRF544 NPN 1 3 90 15 11 14.5 4500 2.2 5 6 14 17 8000 0.45 NPN 1 0 0 0 1.5 10 6 10 8000 1 10 70 NPN 1 0 0 0 2.5 2 5 8 11 5000 1 12 35 3 2 10 10 12.5 5 0 0 0 1 15 30 2 70 400 14 1400 13.5 1500 2 2 4 2 1 3 3 Macro T 8 1 Macro X Power Macro SO-8 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. 50 1.3 Low Cost RF Plastic Package Options 4 1 10 100 70 400 RF (LNA / General Purpose) Selection Guide RF (Low Power PA / General Purpose) Selection Guide 50 MRF581A NPN 512 11 400 MRF517 NPN 400 1.5 20 TO-39 MACRO X 6 3.5 TO-72 MRF559 NPN 470 Ccb(pF) BVCEO IC max (mA) NPN NPN 2N3866A MRF555 Gu Max (dB) 2N5109 MRF5943C TO-39 POWER MACRO Ftau (MHz) TO-39 TO-39 MA C R O X SO-8 NF (dB) NF IC (mA) NF VCE GN (dB) Type 7.5 Freq (MHz) 65 0.5 20 400 20 400 16 500 16 500 16 330 18 1000 12 50 Device 10 NPN 512 12 12 12.5 12.5 12.5 12.5 6 Package 60 50 60 50 50 50 IC max (mA) 18 10 11.5 11.5 11.5 7.8 20 GPE VCC 175 0.15 175 1 175 1.5 175 1.5 175 1.75 175 3 200 BVCEO Efficiency (%) GPE Freq (MHz) GPE (dB) MRF4427, R2 2N4427 MRF553 MRF553T MRF607 2N6255 2N5179 Pout (watts) SO-8 TO-39 POWER MACRO POWER MACRO TO-39 TO-39 TO-72 Type Device Package RF Low Power PA, LNA, and General Purpose Discrete Selector Guide 5 MRF581/MRF581A PIN 1. COLLECTOR 2. EMITTER 3. BASE 4. EMITTER 1. 2. 4. 3. Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.