ADPOW MRF5812

MRF5812, R1, R2
MRF5812G, R1, R2
* G Denotes RoHS Compliant, Pb free Terminal Finish
Features
•
Low Noise - 2.5 dB @ 500 MHZ
•
Associated Gain = 15.5 dB @ 500 MHz
•
Ftau - 5.0 GHz @ 10v, 75mA
•
Cost Effective SO-8 package
SO-8
R1 suffix–Tape and Reel, 500 units
R2 suffix–Tape and Reel, 2500 units
DESCRIPTION: Designed for high current, low power, low noise, amplifiers up to 1.0 GHz.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
VCEO
Parameter
Collector-Emitter Voltage
Value
15
Unit
Vdc
VCBO
Collector-Base Voltage
30
Vdc
VEBO
Emitter-Base Voltage
2.5
Vdc
IC
Collector Current
200
mA
1.25
10
Watts
mW/ ºC
Thermal Data
P
D
Total Device Dissipation @ TC = 25ºC
Derate above 25ºC
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
Rev A 9/2005
MRF5812, R1, R2
MRF5812G, R1, R2
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC
(off)
Symbol
BVCEO
BVCBO
BVEBO
ICBO
IEBO
Test Conditions
Value
Unit
Min.
Typ.
Max.
Collector-Emitter Breakdown Voltage
(IC = 5.0 mAdc, IB = 0)
15
-
-
Vdc
Collector-Base Breakdown Voltage
(IC = 1.0 mAdc, IE = 0)
30
-
-
Vdc
Emitter-Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0)
2.5
-
-
Vdc
Collector Cutoff Current
(VCB = 15 Vdc, VBE = 0 Vdc)
-
-
0.1
mA
Emitter Cutoff Current
(VCE = 2.0 Vdc, VBE = 0 Vdc)
-
-
0.1
mA
(on)
HFE
DC Current Gain
(IC = 50 mAdc, VCE = 5.0 Vdc)
50
200
DYNAMIC
Symbol
COB
Ftau
Test Conditions
Value
Unit
Min.
Typ.
Max.
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
-
1.4
2.0
pF
Current-Gain Bandwidth Product
(IC = 75 mAdc, VCE = 10 Vdc, f = 1.0 GHz)
-
5.0
-
GHz
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
Rev A 9/2005
MRF5812, R1, R2
MRF5812G, R1, R2
FUNCTIONAL
Symbol
NFmin
G
NF
G
U max
MSG
2
|S21|
Value
Test Conditions
Unit
Min.
Typ.
Max.
Minimum Noise Figure
(IC = 50 mAdc, VCE = 10 Vdc, f = 500 MHz)
-
2.0
3.0
Power Gain @ Nfmin
(IC = 50 mAdc, VCE = 10 Vdc, f = 500 MHz)
13
15.5
Maximum Unilateral Gain (1)
IC = 50 mAdc, VCE = 10 Vdc, f = 500 MHz
-
17.8
-
dB
Maximum Stable Gain
IC = 50 mAdc, VCE = 10 Vdc, f = 500 MHz
-
20
-
dB
Insertion Gain
IC = 50 mAdc, VCE = 10 Vdc, f = 500 MHz
-
15
-
dB
dB
dB
Table 1. Common Emitter S-Parameters, @ VCE = 10 V, IC = 50 mA
f
S11
S21
S12
S22
(MHz)
|S11|
∠φ
|S21|
∠φ
|S12|
∠φ
|S22|
100
.579
-141
24
107
.024
49
.397
-76
∠φ
300
.593
-173
8.93
85
.045
66
.233
-103
500
.598
175
5.14
74
.066
69
.248
-110
1000
.592
158
2.64
52
.132
72
.347
-119
2000
.615
115
1.55
20
.310
63
.531
-141
3000
.691
72
1.10
-5
.518
41
.648
-172
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
Rev A 9/2005
MRF5812, R1, R2
MACRO X
MRF559
MACRO X
MRF559
TO-39
2N3866A
SO-8
MRF3866, R1, R2
POWER MACRO
MRF555
POWER MACRO
MRF555T
NPN
NPN
NPN
NPN
NPN
NPN
512
512
400
400
470
470
60
50
60
50
50
50
12
12
12.5
12.5
12.5
12.5
6
20 400
20 400
16 500
16 500
16 330
18 1000
12 50
0.5
0.5
1
1
1.5
1.5
10
13
10
10
11
11
65 7.5 16 150
60 12.5 16 150
45 28 30 400
45 28 30 400
50 12.5 16 400
50 12.5 16 400
MACRO X
MRF559
NPN 870 0.5
MACRO X
MRF559
NPN 870 0.5
SO-8
MRF8372,R1,R2 NPN 870 0.75
POWER MACRO
MRF557
NPN 870 1.5
POWER MACRO
MRF557T
NPN 870 1.5
6.5
9.5
8
8
8
70
65
55
55
55
7.5
12.5
12.5
12.5
12.5
16
16
16
16
16
150
150
200
400
400
TO-39
2N5109
NPN 200
TO-39
MRF5943C
NPN 200
3.4 30 15
MRF5943, R1, R2 NPN 200
3.4 30 15
15
SO-8
3
10 15
12
1200
Ccb(pF)
BVCEO
IC max (mA)
Ftau (MHz)
Gu Max (dB)
NF (dB)
NF IC (mA)
NF VCE
GNF (dB)
Type
Freq (MHz)
Device
Package
IC max (mA)
18
10
11.5
11.5
11.5
7.8
20
BVCEO
175 0.15
175
1
175 1.5
175 1.5
175 1.75
175
3
200
GPE VCC
NPN
NPN
NPN
NPN
NPN
NPN
NPN
Efficiency (%)
GPE (dB)
MRF4427, R2
2N4427
MRF553
MRF553T
MRF607
2N6255
2N5179
GPE Freq (MHz)
(MHz)
Pout (watts)
SO-8
TO-39
POWER MACRO
POWER MACRO
TO-39
TO-39
TO-72
Type
Device
Package
MRF5812G, R1, R2
3.5
11.4 1000
20 400
30 400
1300
30 400
TO-72
2N5179
NPN 200
4.5 1.5
6
17
900
1
12
50
TO-72
2N2857
NPN 300
5.5 50
6
13
1600
1
15
40
TO-39
MRF517
NPN 300
7.5 50 15
5.5 4600
3
25 150
TO-72
MRF904
NPN 450
1.5
11
4000
1
TO-72
2N6304
NPN 450
5
2
5
14
1400
1
15
50
MACRO T
BFR91
NPN 500
1.9
2
5
16.5 5000
1
12
35
BFR96
NPN 500
2
10
10
MRF5812, R1, R2 NPN 500
2
50
10 15.5 17.8 5000
15 200
2
50
10
14
15 200
15
MACRO T
SO-8
MACRO X
MRF581A
NPN 500
5
6
11
14.5
15
500
2.6
5000
30
15 100
Macro
BFR90
NPN 500
2.4
2
10
18
5000
TO-72
BFY90
NPN 500
2.5
2
5
20
1300
15
50
TO-72
MRF914
NPN 500
2.5
5
10
15
4500
12
40
MACRO X
MRF581
NPN 500
2.5 50
10
15
17.8 5000
TO-39
MRF586
NPN 500
90 15
11
14.5 4500
MACRO X
MRF951
NPN 1000 1.3
5
6
14
MACRO X
MRF571
NPN 1000 1.5 10
6
10
MACRO T
BFR91
NPN 1000 2.5
2
5
8
MACRO T
BFR90
NPN 1000
2
10
10
TO-39
TO-39
MRF545
MRF544
3
3
PNP
NPN
1
15
15 30
16 200
2.2
17 200
17
8000 0.45 10 100
8000
1
10
70
11
5000
1
12
35
12.5 5000
1
15
30
14 1400
13.5 1500
2
70 400
70 400
RF (LNA / General Purpose) Selection Guide
RF (Low Power PA / General Purpose) Selection Guide
1
1
8
1
2
4
2
2
4
5
4
3
3
3
Macro T
Macro X
Power Macro
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
Rev A 9/2005
MRF5812, R1, R2
MRF5812G, R1, R2
PIN 1. EMITTER
2. COLLECTOR
3. COLLECTOR
4. EMITTER
8.
5.
1.
4.
5. EMITTER
6. BASE
7. BASE
8. EMITTER
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
Rev A 9/2005