140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 2N5109 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, To-39 packaged VHF/UHF Transistor • 1.2 GHz Current-Gain Bandwidth Product @ 50mA • 1. Emitter 2. Base 3. Collector Maximum Unilateral Gain = 12dB (typ) @ 200 MHz TO-39 DESCRIPTION: The 2N5109 is a silicon NPN transistor, designed for VHF and UHF equipment. Applications include amplifier; pre-driver, driver, and output stages. It is also suitable for oscillator and frequency-multiplier functions. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter Value Unit VCEO Collector-Emitter Voltage 20 Vdc VCBO Collector-Base Voltage 40 Vdc VEBO Emitter-Base Voltage 3.0 Vdc IC Collector Current 400 mA 2.5 20 Watts mW/ ºC Thermal Data P D Total Device Dissipation @ TC = 75º C (1) Derate above 25º C Note 1. Total Device dissipation at TA = 25º C is 1 Watt. Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. 2N5109 ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC (off) Symbol BVCEO(sus) BVCER(sus) ICEO IEBO Test Conditions Value Unit Min. Typ. Max. Collector-Emitter Sustaining Voltage (IC=5.0 mAdc, IB=0) 20 - - Vdc Collector-Emitter Sustaining Voltage (IC = 5.0 mAdc, RBE = 10 ohms) 40 - - Vdc Collector Cutoff Current (VCE = 15 Vdc, IB = 0) - - 20 µA Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) - - 100 µA 5 40 - 120 - (on) HFE DC Current Gain (IC = 360 mAdc, VCE = 5.0 Vdc) (IC = 50 mAdc, VCE = 15.0 Vdc) DYNAMIC Symbol fT Test Conditions Current-Gain - Bandwidth Product (IC = 50 mAdc, VCE = 15 Vdc, f = 200 MHz) Value Min. Typ. Max. - 1200 - Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. Unit MHz 2N5109 FUNCTIONAL Symbol G U max MAG 2 |S21| Value Test Conditions Maximum Unilateral Gain (1) Maximum Available Gain Insertion Gain Unit Min. Typ. Max. IC = 50 mAdc, VCE = 15Vdc, f = 200 MHz - 12 - dB IC = 50 mAdc, VCE = 15Vdc, f = 200 MHz - 11.2 - dB IC = 50 mAdc, VCE = 15Vdc, f = 200 MHz 9.5 10.5 - dB Table 1. Common Emitter S-Parameters, @ VCE = 15 V, IC = 50 mA f S11 S21 S12 S22 (MHz) |S11| ∠φ |S21| ∠φ |S12| ∠φ |S22| 100 .082 167 6.77 87 .073 79 .347 -30 200 .255 172 3.56 71 .135 71 .259 -35 300 .288 132 2.39 61 .217 70 .247 -46 400 .298 137 1.91 50 .271 62 .216 -76 500 .368 126 1.61 41 .320 55 .172 -94 600 .404 121 1.38 33 .390 54 .174 -115 700 116 1.28 27 .477 48 .163 -145 800 .462 .. .503 110 1.21 18 .513 38 .190 176 900 .593 105 1.11 12 .535 33 .246 140 1000 .655 95 1.02 9.8 .604 35 .320 122 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. ∠φ 2N5109 0.5 10 65 7.5 16 150 NPN 512 0.5 13 60 12.5 16 150 NPN 400 1 10 45 28 30 400 MRF3866, R1, R2 NPN 400 1 10 45 28 30 2N5109 NPN 200 3 10 15 12 1200 TO-39 MRF5943C NPN 200 3.4 30 15 11.4 1000 30 400 MRF5943, R1, R2 NPN 200 3.4 30 15 15 1300 30 400 50 SO-8 400 TO-72 2N5179 NPN 200 4.5 1.5 6 17 900 1 12 TO-72 2N2857 NPN 300 5.5 50 6 13 1600 1 15 40 TO-39 MRF517 NPN 300 7.5 50 15 5.5 4600 3 25 150 TO-72 11 4000 1 15 30 14 1400 1 15 50 16.5 5000 1 12 35 2.6 15 100 15 200 15 200 15 30 50 MRF904 NPN 450 1.5 5 6 TO-72 2N6304 NPN 450 5 2 5 MACRO T BFR91 NPN 500 1.9 2 5 MACRO T BFR96 NPN 500 2 10 10 500 2 50 10 15.5 2 50 10 14 15 5000 Macro BFR90 NPN 500 2.4 2 10 15 18 5000 400 TO-72 BFY90 NPN 500 2.5 2 5 20 1300 15 TO-72 MRF914 NPN 500 2.5 5 10 15 4500 12 40 MACRO X MRF581 NPN 500 2.5 50 10 15 17.8 5000 16 200 500 14.5 4500 17 200 50 12.5 16 400 POWER MACRO MRF555T NPN 470 1.5 11 50 12.5 16 400 MA C R O X MRF559 NPN 870 0.5 6.5 70 7.5 16 150 MA C R O X MRF559 NPN 870 0.5 9.5 65 12.5 16 150 SO-8 MRF8372,R1,R2 NPN 870 0.75 8 55 12.5 16 200 POWER MACRO MRF557 NPN 870 1.5 8 55 12.5 16 400 POWER MACRO MRF557T NPN 870 1.5 8 55 12.5 16 400 MRF5812, R1, R2 NPN 14.5 500 11 SO-8 11 500 1.5 TO-39 MRF586 NPN 3 90 15 11 MACRO X MRF951 NPN 1 0 0 0 1.3 5 6 14 MACRO X MRF571 NPN 1 0 0 0 1.5 10 6 10 MACRO T BFR91 NPN 1 0 0 0 2.5 2 5 8 MACRO T BFR90 NPN 1 0 0 0 3 2 10 10 TO-39 MRF545 PNP TO-39 MRF544 NPN 17.8 5000 17 1 2.2 8000 0.45 8000 1 10 70 5000 1 12 35 12.5 5 0 0 0 1 15 30 2 70 400 11 14 1400 13.5 1500 10 100 70 400 RF (LNA / General Purpose) Selection Guide RF (Low Power PA / General Purpose) Selection Guide Low Cost RF Plastic Package Options 1 1 1 8 2 1 4 3 3 Power Macro SO-8 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. 20 NPN NPN 470 Macro X 3.5 MRF581A MRF555 Macro T Ccb(pF) BVCEO IC max (mA) TO-39 MACRO X POWER MACRO 3 Ftau (MHz) Gu Max (dB) GN (dB) NF (dB) NF IC (mA) NF VCE Type Device SO-8 20 400 20 400 16 500 16 500 16 330 18 1000 12 50 Freq (MHz) 2N3866A 60 50 60 50 50 50 Device TO-39 18 10 11.5 11.5 11.5 7.8 20 Package MRF559 IC max (mA) MA C R O X 12 12 12.5 12.5 12.5 12.5 6 BVCEO NPN 512 GPE VCC MRF559 MA C R O X Efficiency (%) 0.15 1 1.5 1.5 1.75 3 MRF4427, R2 2N4427 MRF553 MRF553T MRF607 2N6255 2N5179 GPE (dB) 175 175 175 175 175 175 200 SO-8 TO-39 POWER MACRO POWER MACRO TO-39 TO-39 TO-72 Pout (watts) GPE Freq (MHz) NPN NPN NPN NPN NPN NPN NPN Package Type RF Low Power PA, LNA, and General Purpose RF Discrete Selector Guide 2N5109 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.