2N3866A NPN SILICON HIGH FREQUENCY TRANSISTOR PACKAGE STYLE TO-39 DESCRIPTION: The 2N3866A is a High Frequency Transistor Designed for Amplifier and Oscillator Applications. MAXIMUM RATINGS IC 400 mA VCE 30 V PDISS 5.0 W @ TC = 25 C TJ -65 C to +200 C TSTG -65 C to +200 C O O O O O 1 = Emitter 2 = Base 3 = Collector O θJC 35 C/W CHARACTERISTICS SYMBOL TEST CONDITIONS BVCEO IC = 5.0 mA BVCER IC = 5.0 mA BVEBO IC = 100 µA ICEX NONE O TC = 25 C VCE = 55 V VCE = 30 V MINIMUM RBE = 10 Ω TYPICAL UNITS V 55 V 3.5 V 100 VBE = -1.5 V VBE = -1.5 V MAXIMUM 30 O TC = 200 C 500 µA ICEO VCE = 28 V 20 µA IEBO VEB = 3.5 V 100 µA hFE VCE = 5.0 V 200 --- 1.0 V IC = 50 mA 25 IC = 360 mA 5.0 VCE(SAT) IC = 100 mA IB = 20 mA ft VCE = 15 V IC = 50 mA COB VCB = 28 V GPE VCC = 28 V ηc f = 200 MHz f = 1.0 MHz Pout = 1.0 W f = 400 MHz MHz 800 3.0 pF 10 dB 45 % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1