ETC SD172-11-31-221

SD 172-11-31-221
Red Enhanced Ultra Low Capacitance Silicon Photodiode
PACKAGE
DIMENSIONS INCH [mm]
PACKAGE DIMENSIONS INCH [mm]
.169 [4.29]
.157 [3.99]
45°
.090 [2.29]
3X Ø.018 [0.46]
1
Ø.264 [6.70]
Ø.256 [6.50]
Ø.330 [8.38]
Ø.320 [8.13]
Ø.200 [5.08]
PIN CIRCLE
79°
VIEWING
ANGLE
2
.010 [0.25] MAX
GLASS ABOVE CAP
TOP EDGE
3
Ø .362 [9.19]
Ø .357 [9.07]
3X .500 [12.7] MIN
1 ANODE
CHIP
DIMENSIONS
[mm]
CHIP
DIMENSIONS INCH
INCH [mm]
2 CASE GROUND
.201 [5.11]
3 CATHODE
SCHEMATIC
.142 [3.61]
TO-5 PACKAGE
.126 [3.20] ACTIVE AREA
TO-5 PACKAGE
.185 [4.70] ACTIVE AREA
DESCRIPTION
APPLICATIONS
The SD 172-11-31-221 is an ultra low capacitance
silicon PIN photodiode, red enhanced, packaged in a
leaded hermetic TO-5 metal package.
• Military
• Industrial
• Medical
SPECTRAL RESPONSE
ABSOLUTE MAXIMUM RATING (TA)= 23°C UNLESS OTHERWISE NOTED
+125
+240
°C
* 1/16 inch from case for 3 seconds max.
0.50
0.40
0.30
0.20
0.10
Wavelength (nm)
ELECTRO-OPTICAL CHARACTERISTICS RATING (TA)= 23°C UNLESS OTHERWISE NOTED
SYMBOL
ID
CHARACTERISTIC
Dark Current
CJ
Junction Capacitance
lrange
R
VBR
NEP
Spectral Application Range
Responsivity
Breakdown Voltage
Noise Equivalent Power
tr
Response Time**
TEST CONDITIONS
VR = 50V
VR = 0V, f = 1 MHz
VR = 50V, f = 1 MHz
Spot Scan
l= 900nm, VR = 0 V
I = 10 μA
VR = 5V @ l=950nm
RL = 50 Ω,VR = 0 V
RL = 50 Ω,VR = 50 V
MIN
350
0.50
TYP
35
82
10
MAX
147
UNITS
nA
pF
1100
0.55
75
2.0 x10-13
190
8
nm
A/W
V
W/ √ Hz
nS
**Response time of 10% to 90% is specified at 660nm wavelength light.
Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are
subject to change without notice.
www.lasercomponents.com
Issue: 08/06 / V1 / HW / api/si-pin/red-enhanced-hp/ sd172-11-31-221.pdf
Germany and other countries: LASER COMPONENTS GmbH, Phone: +49 8142 2864 0, Fax: +49 8142 2864 11, [email protected]
Great Britain: LASER COMPONENTS (UK) Ltd., Phone: +44 1245 491 499, Fax: +44 1245 491 801, [email protected]
1150
1100
1050
950
1000
900
250
0.00
850
Soldering Temperature*
-40
°C
°C
800
TS
+150
750
Operating Temperature
-55
0.60
700
TO
V
650
Storage Temperature
75
600
TSTG
0.70
UNITS
550
Reverse Voltage
MAX
500
VBR
MIN
300
PARAMETER
Responsivity (A/W)
SYMBOL
450
Low noise
Red enhanced
High shunt resistance
High response
400
•
•
•
•
350
FEATURES