SD 172-11-31-221 Red Enhanced Ultra Low Capacitance Silicon Photodiode PACKAGE DIMENSIONS INCH [mm] PACKAGE DIMENSIONS INCH [mm] .169 [4.29] .157 [3.99] 45° .090 [2.29] 3X Ø.018 [0.46] 1 Ø.264 [6.70] Ø.256 [6.50] Ø.330 [8.38] Ø.320 [8.13] Ø.200 [5.08] PIN CIRCLE 79° VIEWING ANGLE 2 .010 [0.25] MAX GLASS ABOVE CAP TOP EDGE 3 Ø .362 [9.19] Ø .357 [9.07] 3X .500 [12.7] MIN 1 ANODE CHIP DIMENSIONS [mm] CHIP DIMENSIONS INCH INCH [mm] 2 CASE GROUND .201 [5.11] 3 CATHODE SCHEMATIC .142 [3.61] TO-5 PACKAGE .126 [3.20] ACTIVE AREA TO-5 PACKAGE .185 [4.70] ACTIVE AREA DESCRIPTION APPLICATIONS The SD 172-11-31-221 is an ultra low capacitance silicon PIN photodiode, red enhanced, packaged in a leaded hermetic TO-5 metal package. • Military • Industrial • Medical SPECTRAL RESPONSE ABSOLUTE MAXIMUM RATING (TA)= 23°C UNLESS OTHERWISE NOTED +125 +240 °C * 1/16 inch from case for 3 seconds max. 0.50 0.40 0.30 0.20 0.10 Wavelength (nm) ELECTRO-OPTICAL CHARACTERISTICS RATING (TA)= 23°C UNLESS OTHERWISE NOTED SYMBOL ID CHARACTERISTIC Dark Current CJ Junction Capacitance lrange R VBR NEP Spectral Application Range Responsivity Breakdown Voltage Noise Equivalent Power tr Response Time** TEST CONDITIONS VR = 50V VR = 0V, f = 1 MHz VR = 50V, f = 1 MHz Spot Scan l= 900nm, VR = 0 V I = 10 μA VR = 5V @ l=950nm RL = 50 Ω,VR = 0 V RL = 50 Ω,VR = 50 V MIN 350 0.50 TYP 35 82 10 MAX 147 UNITS nA pF 1100 0.55 75 2.0 x10-13 190 8 nm A/W V W/ √ Hz nS **Response time of 10% to 90% is specified at 660nm wavelength light. Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. www.lasercomponents.com Issue: 08/06 / V1 / HW / api/si-pin/red-enhanced-hp/ sd172-11-31-221.pdf Germany and other countries: LASER COMPONENTS GmbH, Phone: +49 8142 2864 0, Fax: +49 8142 2864 11, [email protected] Great Britain: LASER COMPONENTS (UK) Ltd., Phone: +44 1245 491 499, Fax: +44 1245 491 801, [email protected] 1150 1100 1050 950 1000 900 250 0.00 850 Soldering Temperature* -40 °C °C 800 TS +150 750 Operating Temperature -55 0.60 700 TO V 650 Storage Temperature 75 600 TSTG 0.70 UNITS 550 Reverse Voltage MAX 500 VBR MIN 300 PARAMETER Responsivity (A/W) SYMBOL 450 Low noise Red enhanced High shunt resistance High response 400 • • • • 350 FEATURES