Rev 4:Nov 2004 AOD414, AOD414L( Green Product ) N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD414 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and body diode characteristics. This device is ideally suited for use as a low side switch in CPU core power conversion. AOD414L ( Green Product ) is offered in a lead-free package. VDS (V) = 30V ID = 85A RDS(ON) < 5.2mΩ (VGS = 10V) RDS(ON) < 7.0mΩ (VGS = 4.5V) TO-252 D-PAK D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B,G TC=25°C G Pulsed Drain Current Avalanche Current C C TC=25°C Power Dissipation B V Junction and Storage Temperature Range 200 IAR 30 A EAR 140 mJ 100 W 50 2.5 W 1.6 TJ, TSTG -55 to 175 Symbol t ≤ 10s Steady-State Steady-State Alpha & Omega Semiconductor, Ltd. A 73 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A A Maximum Junction-to-Ambient Maximum Junction-to-Lead C ±20 ID IDM PD TC=100°C TA=25°C Power Dissipation A Units V 85 TC=100°C B Repetitive avalanche energy L=0.1mH Maximum 30 RθJA RθJL Typ 14.2 40 0.56 °C Max 20 50 1.5 Units °C/W °C/W °C/W AOD414, AOD414L Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V 30 VDS=24V, V GS=0V Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.2 ID(ON) On state drain current VGS=4.5V, VDS=5V 110 100 5.6 7 VDS=5V, ID=20A 85 IS=1A,V GS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current TJ=125°C Reverse Transfer Capacitance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge nA V 6060 mΩ mΩ S 0.7 DYNAMIC PARAMETERS Ciss Input Capacitance µA A VGS=4.5V, ID=20A VSD Gate resistance 2.4 7.5 Forward Transconductance Rg 1.8 6 gFS Crss 5 5.2 Static Drain-Source On-Resistance Output Capacitance 1 4.2 RDS(ON) Units V TJ=55°C VGS=10V, ID=20A Coss Max 0.005 IDSS IS Typ 1 V 85 A 7000 pF VGS=0V, VDS=15V, f=1MHz 638 VGS=0V, VDS=0V, f=1MHz 0.45 0.6 Ω 96.4 115 nC 46.4 55 nC pF 355 VGS=4.5V, VDS=15V, ID=20A pF 13.6 nC Qgd Gate Drain Charge 15.6 tD(on) Turn-On DelayTime 15.7 21 ns tr Turn-On Rise Time 14.2 21 ns tD(off) Turn-Off DelayTime 55.5 75 ns tf Turn-Off Fall Time 14 21 ns trr Body Diode Reverse Recovery Time IF=20A, dI/dt=100A/µs 31 38 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs 24 29 ns nC VGS=10V, V DS=15V, R L=0.75Ω, RGEN=3Ω nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation P DSM is based on steady-state R θJA and the maximum allowed junction temperature of 150°C. The value in any a given application depends on the user's specific board design, and the maximum temperature fo 175°C may be used if the PCB or heatsink allows it. B. The power dissipation P D is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. TC=100°C G. The maximum current rating is limited by the package current capability. TA=25°C -55 to 175 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AOD414, AOD414L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 60 10V 50 50 VDS=5V 4.5V 40 3.5V 30 30 VGS=3V 20 20 10 10 0 25°C 0 0 1 2 3 4 VDS (Volts) Figure 1: On-Region Characteristics 5 7.0 1 1.5 2 2.5 3 3.5 VGS(Volts) Figure 2: Transfer Characteristics 4 1.8 Normalized On-Resistance 6.5 ID=20A 1.6 VGS=4.5V 6.0 RDS(ON) (mΩ) 125°C ID(A) ID(A) 40 5.5 1.4 5.0 VGS=10V 1.2 VGS=10V 4.5 VGS=4.5V 4.0 3.5 3.0 1 0.8 0 20 40 60 80 100 0 25 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 12 1.0E+02 1.0E+01 10 1.0E+00 8 125°C IS (A) RDS(ON) (mΩ) ID=20A TC=100°C TA=25°C 6 125°C 1.0E-01 1.0E-02 25°C 25°C 1.0E-03 -55 to 175 4 1.0E-04 1.0E-05 2 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 AOD414, AOD414L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 8000 10 VDS=15V ID=20A Capacitance (pF) VGS (Volts) 8 Ciss 7000 6 4 2 6000 5000 4000 3000 Coss 2000 Crss 1000 0 0 0 20 40 60 80 100 0 Qg (nC) Figure 7: Gate-Charge Characteristics 1000 100 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 1ms 0.1s 10 1s 10s TJ(Max)=150°C TA=25°C 1 1 10 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 1 0.1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=50°C/W 60 40 20 DC 0.1 0.1 TJ(Max)=150°C TA=25°C 80 100µs 10ms Power (W) ID (Amps) 10 100 RDS(ON) limited ZθJA Normalized Transient Thermal Resistance 5 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse TC=100°C TA=25°C PD -55 to 175 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. 0.01 100 1000 AOD414, AOD414L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 TA=25°C 100 Power Dissipation (W) ID(A), Peak Avalanche Current 100 80 60 tA = 40 L ⋅ ID BV − V DD 20 0.0001 0.001 0.01 40 20 100 80 60 40 20 0 25 50 75 100 125 150 TCASE (°C) Figure 14: Current De-rating (Note B) Alpha & Omega Semiconductor, Ltd. 0 25 50 75 100 125 150 TCASE (°C) Figure 13: Power De-rating (Note B) Time in avalanche, t A (s) Figure 12: Single Pulse Avalanche capability Current rating ID(A) 60 0 0 0.00001 0 80 175 175