AOU417 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOU417 uses advanced trench technology to provide excellent RDS(ON), and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard product AOU417 is Pbfree (meets ROHS & Sony 259 specifications). AOU417L is a Green Product ordering option. AOU417 and AOU417L are electrically identical . VDS (V) = -30V ID = -18A (VGS = -10V) RDS(ON) < 22mΩ (VGS = -10V) RDS(ON) < 40mΩ (VGS = -4.5V) TO-251 D Top View Drain Connected to Tab G D G S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B,G TA=25°C G Pulsed Drain Current Avalanche Current C Power Dissipation B C TC=25°C Junction and Storage Temperature Range V A -18 IAR -18 A EAR 16.2 mJ -40 50 Steady-State Steady-State W 25 TJ, TSTG Thermal Characteristics Parameter Alpha & Omega Semiconductor, Ltd. ±20 ID IDM PD TC=100°C Maximum Junction-to-Ambient A Maximum Junction-to-Case C Units V -18 TA=100°C G Repetitive avalanche energy L=0.1mH Maximum -30 -55 to 175 Symbol RθJA RθJL °C Typ Max Units 105 2.5 125 3 °C/W °C/W AOU417 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250µA, VGS=0V -30 -1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -1.4 ID(ON) On state drain current VGS=-10V, VDS=-5V -40 RDS(ON) Static Drain-Source On-Resistance gFS Forward Transconductance VSD Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current TJ=55°C VGS=-10V, ID=-18A Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge (10V) Qg(4.5V) Total Gate Charge (4.5V) Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time -5 -2 -2.7 V A 22 30 VGS=-4.5V, ID=-10A 29 40 VDS=-5V, ID=-18A 21 -0.7 1573 VGS=-10V, VDS=-15V, ID=-18A VGS=-10V, VDS=-15V, RL=0.83Ω, RGEN=3Ω mΩ mΩ S -1 V -1.2 A 1900 pF 319 pF 211 VGS=0V, VDS=0V, f=1MHz µA nA 18 VGS=0V, VDS=-15V, f=1MHz Units ±100 25 TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Coss Max V VDS=-24V, VGS=0V IDSS IS Typ pF 6.7 10 Ω 29.3 35 nC 15 18 nC 6.1 nC 7 nC 11.7 ns 29 ns 42 ns 32.5 trr Body Diode Reverse Recovery Time IF=-18A, dI/dt=100A/µs 28.3 Qrr Body Diode Reverse Recovery Charge IF=-18A, dI/dt=100A/µs 20.5 ns 37 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. D. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. E. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. G. The maximum current rating is limited by bond-wires. Rev1: August 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, Ltd. AOU417 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 30 -10V -5V 25 VDS=-5V 25 -4V 20 15 -ID(A) -ID (A) 20 -3.5V 15 10 10 125°C VGS=-3V 5 5 0 25°C 0 0 1 2 3 4 5 1 1.5 35 3 3.5 4 4.5 5 1.6 Normalized On-Resistance VGS=-4.5V 30 RDS(ON) (mΩ) 2.5 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Fig 1: On-Region Characteristics 1.4 25 VGS=-10V ID=-18A 1.2 VGS=-10V 20 15 10 VGS=-4.5V ID=-10A 1 0.8 0 5 10 15 20 25 0 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 60 ID=-18A 50 1.0E+00 1.0E-01 125°C 30 -IS (A) 40 RDS(ON) (mΩ) 2 125°C 1.0E-02 1.0E-03 20 25°C 10 1.0E-04 1.0E-05 0 3 4 5 6 7 8 9 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 25°C 1.0E-06 0.0 0.2 0.4 0.6 0.8 -VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 AOU417 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 2500 10 VDS=-15V ID=-18A 2000 Capacitance (pF) -VGS (Volts) 8 6 4 2 Ciss 1500 Coss 1000 Crss 500 0 0 5 10 15 20 25 0 30 0 -Qg (nC) Figure 7: Gate-Charge Characteristics 100 1 Power (W) -ID (Amps) 100m 10s 1s DC 1ms 10ms 10 100 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) ZθJC Normalized Transient Thermal Resistance 10 30 120 80 0 0.0001 1 25 40 0.1 0.1 20 TJ(Max)=175°C TA=25°C 160 100µs RDS(ON) limited 15 200 10µs 10 10 -VDS (Volts) Figure 8: Capacitance Characteristics 10µs TJ(Max)=175°C, TA=25°C 5 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=3°C/W 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton 0.01 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 T 1 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. 10 100 AOU417 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 L ⋅ ID tA = BV − VDD 40 Power Dissipation (W) -ID(A), Peak Avalanche Current 50 30 20 TA=25°C 10 0.0001 0.001 30 20 10 20 15 10 5 0 25 50 75 100 125 150 TCASE (°C) Figure 14: Current De-rating (Note B) Alpha & Omega Semiconductor, Ltd. 0 25 50 75 100 125 150 TCASE (°C) Figure 13: Power De-rating (Note B) Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability Current rating -ID(A) 40 0 0 0.00001 0 50 175 175