AOD420 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD420 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AOD420 is Pb-free (meets ROHS & Sony 259 specifications). AOD420L is a Green Product ordering option. AOD420 and AOD420L are electrically identical. VDS (V) = 30V ID = 10A (VGS = 10V) RDS(ON) < 28mΩ (VGS = 10V) RDS(ON) < 42mΩ (VGS = 4.5V) TO-252 D-PAK D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G TC=100°C C Avalanche Current C Repetitive avalanche energy L=0.1mH C TC=25°C Power Dissipation B Power Dissipation A ±20 V TA=25°C 10 IAR 15 A 36 mJ 30 EAR 60 Junction and Storage Temperature Range 2.5 -55 to 175 Symbol Alpha & Omega Semiconductor, Ltd. W 1.6 TJ, TSTG t ≤ 10s Steady-State Steady-State W 30 PDSM TA=70°C A ID IDM PD TC=100°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A A Maximum Junction-to-Ambient B Maximum Junction-to-Case Units V 10 TC=25°C Pulsed Drain Current Maximum 30 RθJA RθJC Typ 16.7 40 1.9 °C Max 25 50 2.5 Units °C/W °C/W °C/W AOD420 Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V 30 IGSS Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1 ID(ON) On state drain current VGS=4.5V, VDS=5V 40 TJ=55°C 40 VGS=4.5V, ID=7A 32.5 42 VDS=5V, ID=10A 15.6 Forward Transconductance VSD IS=1A,V GS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr nA V 710 120 VGS=0V, VDS=0V, f=1MHz 1.1 mΩ mΩ S 0.75 VGS=0V, VDS=15V, f=1MHz 1 V 10 A 850 pF pF 72 VGS=10V, V DS=15V, ID=10A µA A 31 gFS Crss 3 28 Static Drain-Source On-Resistance Rg 1.8 21 RDS(ON) Output Capacitance 5 100 VGS=10V, ID=10A Units V 1 Zero Gate Voltage Drain Current Coss Max VDS=24V, V GS=0V IDSS IS Typ pF 3.6 Ω 14.4 18 nC 7 8.4 nC 2.6 nC Gate Drain Charge 2.7 nC Turn-On DelayTime 5.6 ns Body Diode Reverse Recovery Charge VGS=10V, V DS=15V, R L=1.5Ω, RGEN=3Ω 2.4 ns 15.6 ns 2.2 ns IF=10A, dI/dt=100A/µs 13.4 IF=10A, dI/dt=100A/µs 4.4 21 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation P DSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation P D is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. G. The maximum current rating is limited by bond-wires. Rev4: August 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AOD420 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 50 20 10V 5V 7V 30 4V 20 12 125°C 8 VGS=3.5V 10 VDS=5V 16 4.5V ID(A) ID (A) 40 25°C 4 3.0V 0 0 0 1 2 3 4 1.5 5 2 50 3.5 4 1.8 Normalized On-Resistance 45 40 RDS(ON) (mΩ) 3 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics 35 VGS=4.5V 30 25 20 VGS=10V 15 10 0 5 10 15 ID=10A 1.6 VGS=10V 1.4 VGS=4.5 1.2 1 0.8 20 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 60 1.0E+00 50 ID=10A 1.0E-01 40 IS (A) RDS(ON) (mΩ) 2.5 125°C 30 125° 1.0E-02 25°C 1.0E-03 25°C 20 1.0E-04 1.0E-05 10 2 4 6 8 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 10 0.0 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 AOD420 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1000 10 VDS=15V ID=10A 800 6 600 VGS (Volts) Capacitance (pF) 8 4 2 Ciss 400 Coss Crss 200 0 0 4 8 12 0 16 0 5 Qg (nC) Figure 7: Gate-Charge Characteristics 10 15 20 25 30 VDS (Volts) Figure 8: Capacitance Characteristics 100.0 60 T J(Max)=150°C T A=25°C RDS(ON) limited 50 1ms 100µs 10ms 10.0 40 Power (W) ID (Amps) 0.1s 1s 1.0 20 10s TJ(Max)=150°C TA=25°C DC 10 0.1 0.1 1 10 0 100 0.001 VDS (Volts) Zθ JA Normalized Transient Thermal Resistance 1 D=T on/T T J,PK =T A+PDM.ZθJA.RθJA RθJA=50°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-to-Ambient (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 30 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 0.001 0.00001 T on Single Pulse 0.0001 0.001 0.01 0.1 1 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. 10 T 100 1000