AOSMD AOD417

AOD417
P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOD417 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and low
gate resistance. With the excellent thermal resistance
of the DPAK package, this device is well suited for
high current load applications. Standard Product
AOD417 is Pb-free (meets ROHS & Sony 259
specifications).
VDS (V) = -30V
(V GS = -10V)
ID = -25A
RDS(ON) < 34mΩ (VGS = -10V)
RDS(ON) < 55mΩ (VGS = -4.5V)
TO-252
D-PAK
D
Top View
Drain Connected
to Tab
G
S
G
D
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
Continuous Drain
Current B,G
TA=25°C
G
Pulsed Drain Current
C
C
Repetitive avalanche energy L=0.3mH
C
TC=25°C
Power Dissipation
B
V
Junction and Storage Temperature Range
IAR
-14
A
EAR
30
mJ
-60
50
W
25
5
W
3.2
TJ, TSTG
°C
-55 to 175
Symbol
t ≤ 10s
Steady-State
Steady-State
Alpha & Omega Semiconductor, Ltd.
A
-20
PDSM
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Case D
±20
ID
IDM
PD
TC=100°C
TA=25°C
Power Dissipation A
Units
V
-25
TA=100°C
Avalanche Current
Maximum
-30
RθJA
RθJL
Typ
16.7
40
2.5
Max
25
50
3
Units
°C/W
°C/W
°C/W
AOD417
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=-250µA, VGS=0V
-30
Gate-Body leakage current
VDS=0V, VGS=±20V
Gate Threshold Voltage
VDS=VGS ID=-250µA
-1
ID(ON)
On state drain current
VGS=-10V, VDS=-5V
-60
VGS=-10V, ID=-20A
TJ=125°C
VGS=-4.5V, ID=-7A
gFS
Forward Transconductance
IS=-1A,VGS=0V
Diode Forward Voltage
Maximum Body-Diode Continuous Current
IS
VDS=-5V, ID=-20A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge (10V)
Qg(4.5V) Total Gate Charge (4.5V)
VGS=0V, VDS=-15V, f=1MHz
µA
-5
IGSS
VSD
Units
-1
TJ=55°C
Static Drain-Source On-Resistance
Max
V
VDS=-24V, VGS=0V
VGS(th)
RDS(ON)
Typ
±100
nA
-1.9
-3
V
27
34
A
36
40
mΩ
55
mΩ
-1
V
-6
A
18
-0.75
S
920
pF
140
pF
90
VGS=0V, VDS=0V, f=1MHz
VGS=-10V, VDS=-15V, ID=-20A
6
pF
9
Ω
16.2
nC
8.2
nC
Qgs
Gate Source Charge
2.9
nC
Qgd
Gate Drain Charge
3.6
nC
tD(on)
Turn-On DelayTime
8
ns
tr
Turn-On Rise Time
30
ns
tD(off)
Turn-Off DelayTime
22
ns
tf
Turn-Off Fall Time
26
ns
trr
Body Diode Reverse Recovery Time
IF=-20A, dI/dt=100A/µs
23
Qrr
Body Diode Reverse Recovery Charge IF=-20A, dI/dt=100A/µs
14
ns
nC
VGS=-10V, VDS=-15V, RL=0.75Ω,
RGEN=3Ω
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with
TA =25°C. The Power dissipation P DSM is based on R θJA (<10s) and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation P D is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T J(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
Rev 0: Oct. 2006
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AOD417
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25
60
-10V
VDS=-5V
50
-6V
ID=-10mA,
20
-4.5V
15
-ID(A)
-ID (A)
40
VGS=0V
30
20
10
VGS=-3.5V
125°C
5
10
0
25°C
0
1
2
3
4
5
1
1.5
2
2.5
3
3.5
60
Normalized On-Resistance
55
50
VGS=-4.5V
40
35
VGS=-10V
30
4.5
5
850
185
90
1.6
45
4
-VGS(Volts)
Figure 2: Transfer Characteristics
-VDS (Volts)
Figure 1: On-Region Characteristics
RDS(ON) (mΩ)
-40°C
0
25
1.4
VGS=-10V
ID=-20A
1.2
1
VGS=-4.5V
ID=-7A
0.8
0.6
20
0
5
10
15
20
-50
25
-25
0
25
50
75
100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
80
1.0E+01
ID=-20A
1.0E+00
70
1.0E-01
1.0E-02
-IS (A)
RDS(ON) (mΩ)
60
125°C
50
125°C
1.0E-03
40
-40°C
1.0E-04
30
25°C
25°C
1.0E-05
20
1.0E-06
3
4
5
6
7
8
9
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
10
0.0
0.2
0.4
0.6
0.8
-VSD (Volts)
Figure 6: Body-Diode Characteristics
1.0
AOD417
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1500
VDS=-15V
ID=-20A
ID=-10mA, VGS=0V
1250
Capacitance (pF)
-VGS (Volts)
8
6
4
Ciss
1000
2
750
500
Crss
Coss
250
0
0
0
3
6
9
12
15
0
18
1000.0
10
15
20
160
RDS(ON)
limited
1.0
0.1
DC
100µs
Power (W)
10µs
10.0
TJ(Max)=175°C
TC=25°C
0.0
0.01
0.1
25
30
850
185
90
200
100.0
ID (Amps)
5
-VDS (Volts)
Figure 8: Capacitance Characteristics
-Qg (nC)
Figure 7: Gate-Charge Characteristics
TJ(Max)=175°C
TC=25°C
120
80
40
1
VDS (Volts)
10
0
0.0001
100
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
ZθJC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=Tc+PDM.ZθJC.RθJC
RθJC=3°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
T
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
100
1000
AOD417
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
100
ID=-10mA, VGS=0V
80
TA=25°C
60
40
TA=150°C
50
Power Dissipation (W)
-ID(A), Peak Avalanche Current
120
20
40
30
20
10
0
0
0.000001
0.00001
0.0001
0
0.001
25
30
60
25
50
20
40
Power (W)
Current rating
75
100
125
150
175
TCASE (°C)
Figure 13: Power De-rating (Note B)
Time in avalanche, t A (s)
Figure 12: Single Pulse Avalanche capability
15
10
5
850
185
90
TA=25°C
30
20
10
0
0
25
50
75
100
125
150
0
0.001
175
TCASE (°C)
Figure 14: Current De-rating (Note B)
10
ZθJA Normalized Transient
Thermal Resistance
50
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=50°C/W
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.01
Single Pulse
0.001
0.00001
0.0001
Ton
0.001
0.01
0.1
1
T
10
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Alpha & Omega Semiconductor, Ltd.
100
1000