MICROSEMI APT15D120K

1200V 15A
APT15D120K
APT15D120KG*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
(K)
PRODUCT APPLICATIONS
PRODUCT FEATURES
PRODUCT BENEFITS
• Anti-Parallel Diode
-Switchmode Power Supply
-Inverters
• Free Wheeling Diode
-Motor Controllers
-Converters
-Inverters
• Snubber Diode
• Ultrafast Recovery Times
• Low Losses
• Soft Recovery Characteristics
• Low Noise Switching
• Popular TO-220 Package
• Cooler Operation
• Low Forward Voltage
• Higher Reliability Systems
• Low Leakage Current
• Increased System Power
Density
1
2
• PFC
2
1
1 - Cathode
2 - Anode
Back of Case - Cathode
All Ratings: TC = 25°C unless otherwise specified.
MAXIMUM RATINGS
Symbol
VR
Characteristic / Test Conditions
APT15D120K(G)
UNIT
1200
Volts
Maximum D.C. Reverse Voltage
VRRM
Maximum Peak Repetitive Reverse Voltage
VRWM
Maximum Working Peak Reverse Voltage
IF(AV)
Maximum Average Forward Current (TC = 123°C, Duty Cycle = 0.5)
15
RMS Forward Current (Square wave, 50% duty)
27
Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms)
110
IF(RMS)
IFSM
TJ,TSTG
TL
Amps
-55 to 175
Operating and StorageTemperature Range
°C
300
Lead Temperature for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
VF
Characteristic / Test Conditions
Forward Voltage
IRM
Maximum Reverse Leakage Current
CT
Junction Capacitance, VR = 200V
MIN
TYP
MAX
IF = 15A
2.0
2.5
IF = 30A
2.3
IF = 15A, TJ = 125°C
1.8
Volts
VR = VR Rated
250
VR = VR Rated, TJ = 125°C
500
Microsemi Website - http://www.microsemi.com
17
UNIT
μA
pF
053-0019 Rev C 2-2010
Symbol
APT15D120K(G)
DYNAMIC CHARACTERISTICS
Symbol
Characteristic
Test Conditions
trr
Reverse Recovery Time
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
trr
Qrr
IRRM
trr
Qrr
IRRM
MIN
TYP
-
32
-
260
-
480
-
4
-
370
ns
-
1300
nC
-
9
-
140
ns
-
2000
nC
-
28
Amps
MIN
TYP
IF = 1A, diF/dt = -100A/μs, VR = 30V, TJ = 25°C
IF = 15A, diF/dt = -200A/μs
VR = 800V, TC = 25°C
Maximum Reverse Recovery Current
Reverse Recovery Time
IF = 15A, diF/dt = -200A/μs
Reverse Recovery Charge
Maximum Reverse Recovery Current
VR = 800V, TC = 125°C
Reverse Recovery Time
IF = 15A, diF/dt = -1000A/μs
Reverse Recovery Charge
Maximum Reverse Recovery Current
VR = 800V, TC = 125°C
MAX
UNIT
ns
nC
-
-
Amps
Amps
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
Characteristic / Test Conditions
RθJC
Junction-to-Case Thermal Resistance
RθJA
Junction-to-Ambient Thermal Resistance
WT
Torque
MAX
1.18
0.07
oz
1.9
g
Maximum Mounting Torque
10
lb•in
1.1
N•m
Microsemi Reserves the right to change, without notice, the specifications and information contained herein.
0.9
1.00
0.5
Note:
0.40
0.3
t1
t2
0.20
0
053-0019 Rev C 2-2010
0.7
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
1.20
0.60
SINGLE PULSE
0.1
0.05
10
-5
10-4
°C/W
80
Package Weight
0.80
UNIT
t
Duty Factor D = 1/t2
Peak TJ = PDM x ZθJC + TC
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 1. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
TYPICAL PERFORMANCE CURVES
30
TJ = 150°C
TJ = 25°C
TJ = 125°C
10
trr, REVERSE RECOVERY TIME
(ns)
IF, FORWARD CURRENT
(A)
40
20
APT15D120K(G)
500
50
T = 125°C
J
V = 800V
R
30A
400
15A
300
7.5A
200
100
TJ = -55°C
0
0.5
1
1.5
2
2.5
3
3.5
VF, ANODE-TO-CATHODE VOLTAGE (V)
Figure 2. Forward Current vs. Forward Voltage
Qrr, REVERSE RECOVERY CHARGE
(nC)
3500
T = 125°C
J
V = 800V
R
3000
30A
2500
2000
15A
1500
1000
7.5A
500
0
0
200
400
600
800 1000 1200
-diF /dt, CURRENT RATE OF CHANGE (A/μs)
Figure 4. Reverse Recovery Charge vs. Current Rate of Change
trr
1.0
IRRM
0
200
400
600
800 1000 1200
-diF /dt, CURRENT RATE OF CHANGE(A/μs)
Figure 3. Reverse Recovery Time vs. Current Rate of Change
R
30
30A
25
20
15
15A
10
7.5A
5
35
Qrr
Duty cycle = 0.5
T = 175°C
J
30
trr
25
0.6
Qrr
20
15
10
0.2
0.0
T = 125°C
J
V = 800V
0
200
400
600
800 1000 1200
-diF /dt, CURRENT RATE OF CHANGE (A/μs)
Figure 5. Reverse Recovery Current vs. Current Rate of Change
0.8
0.4
35
0
IF(AV) (A)
Kf, DYNAMIC PARAMETERS
(Normalized to 1000A/μs)
1.2
0
IRRM, REVERSE RECOVERY CURRENT
(A)
0
5
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (°C)
Figure 6. Dynamic Parameters vs. Junction Temperature
0
25
50
75
100
125
150
175
Case Temperature (°C)
Figure 7. Maximum Average Forward Current vs. CaseTemperature
120
100
80
60
40
20
0
1
10
100 200
VR, REVERSE VOLTAGE (V)
Figure 8. Junction Capacitance vs. Reverse Voltage
053-0019 Rev C 2-2010
CJ, JUNCTION CAPACITANCE
(pF)
140
APT15D120K(G)
Vr
diF /dt Adjust
+18V
APT10035LLL
0V
D.U.T.
30μH
trr/Qrr
Waveform
PEARSON 2878
CURRENT
TRANSFORMER
Figure 9. Diode Test Circuit
1
IF - Forward Conduction Current
2
diF /dt - Rate of Diode Current Change Through Zero Crossing.
3
IRRM - Maximum Reverse Recovery Current.
4
trr - Reverse Recovery Time, measured from zero crossing where diode
current goes from positive to negative, to the point at which the straight
line through IRRM and 0.25 IRRM passes through zero.
5
1
4
Zero
5
0.25 IRRM
3
2
Qrr - Area Under the Curve Defined by IRRM and trr.
Figure 10, Diode Reverse Recovery Waveform and Definitions
TO-220 (K) Package Outline
e3 100% Sn
0.404 [10.26]
0.393 [9.98]
Cathode
0.114 [2.90]
0.102 [2.59]
0.186 [4.72]
0.174 [4.42]
0.058 [1.47]
0.047 [1.19]
ø0.153 [3.89]
ø0.149 [3.78]
0.508 [12.90]
0.492 [12.50]
0.362 [9.19]
0.354 [8.99]
0.154 [3.91]
0.134 [3.40]
0.531 [13.49]
0.515 [13.08]
0.110 [2.79]
0.099 [2.51]
0.057 [1.45]
0.047 [1.19]
053-0019 Rev C 2-2010
Cathode
Anode
0.100 [2.54] TYP
0.204 [5.18]
0.196 [4.98]
0.034 [0.86]
0.030 [0.76]
0.018 [0.46]
0.014 [0.36]
Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583
4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. US and Foreign patents pending. All Rights Reserved.