Databook.fxp 1/13/99 2:09 PM Page F-30 F-30 01/99 PJ99 Process Silicon Junction Field-Effect Transistor ¥ General Purpose Amplifier ¥ Analog Switch G Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts S-D 10 mA +150°C – 65°C to +175°C S-D Devices in this Databook based on the PJ99 Process. Datasheet Datasheet 2N3993, 2N3993A 2N3994, 2N3994A 2N5114, 2N5115 2N5116 2SJ44 IFN5114, IFN5115 IFN5116 IFP44 J174, J175 J176, J177 P1086, P1087 VCR3P G Die Size = 0.021" X 0.021" All Bond Pads = 0.004" Sq. Substrate is also Gate. At 25°C free air temperature: PJ99 Process Static Electrical Characteristics Gate Source Breakdown Voltage V(BR)GSS Reverse Gate Leakage Current IGSS Drain Saturation Current (Pulsed) IDSS Gate Source Cutoff Voltage VGS(OFF) Min Typ 30 40 Max Unit Test Conditions V IG = 1 µA, VDS = ØV 1 nA VGS = 20V, VDS = ØV –5 – 60 mA VDS = – 15V, VGS = ØV 1 8 V VDS = – 15V, ID = 1 nA 0.5 Dynamic Electrical Characteristics Drain Source ON Resistance rds(on) 75 Ω ID = 1 mA, VGS = ØV f = 1 kHz Forward Transconductance gfs 15 mS VDS = – 15V, VGS = ØV f = 1 kHz Input Capacitance Ciss 18 pF VDS = 15V, VGS = ØV f = 1 MHz Feedback Capacitance Ciss 4.5 pF VDS = ØV, VGS = 10V f = 1 MHz Equivalent Noise Voltage e¯ N 8 Turn On Delay Time td(on) 5 ns Rise Time tr 10 ns Turn Off Delay Time td(off) 6 ns Fall Time tf 5 ns 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 nV/√HZ VDS = – 10V, VGS = ØV f = 1 kHz VDD = – 10V, ID(ON) = – 15 mA RL = 580 Ω, VGS(ON) = ØV VGS(OFF) = 12V www.interfet.com Databook.fxp 1/13/99 2:09 PM Page F-31 F-31 01/99 PJ99 Process Silicon Junction Field-Effect Transistor Drain Current as a Function of VDS Gfs as a Function of VGS(OFF) VGS(OFF) = Ð2.4 V – 25 25 Transconductance in mS Drain Current in µA VGS = Ø V – 20 VGS = 0.5 V – 15 VGS = 1.0 V – 10 VGS = 1.5 V –5 VGS = 2.0 V –5 – 10 – 15 10 0 2 4 6 8 10 Drain to Source Voltage in Volts Gate Source Cutoff Voltage in Volts Drain Saturation Current as a Function of VGS(OFF) IDSS as a Function of RDS – 80 – 60 – 40 – 20 0 2 4 6 8 100 75 50 25 0 – 20 – 40 – 60 – 80 Gate Source Cutoff Voltage in Volts Drain Saturation Current in mA Input Capacitance as a Function of VGS Feedback Capacitance as a Function of VGS – 100 12 Feedback Capacitance in pF VDS = Ø V 16 VDS = – 10 V 8 0.1 125 10 24 Input Capacitance in pF 15 – 20 Drain Source (on) Resistance in Ω Drain Saturation Current in mA 0 20 1 Gate Source Voltage in Volts 10 20 VDS = Ø V 8 4 VDS = – 10 V 0.1 1 Gate Source Voltage in Volts 10 20