Databook.fxp 1/13/99 2:09 PM Page F-36 F-36 01/99 NJ450 Process Silicon Junction Field-Effect Transistor ¥ LOW R(on) Switch ¥ Low-Noise, High Gain Amplifier S-D Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts G 10 mA +150°C – 65°C to +175°C Devices in this Databook based on the NJ450 Process. S-D Datasheet G 2SK363 IFN146, IFN147 IFN363 J108, J109 J110, J110A Die Size = 0.028" X 0.028" All Bond Pads = 0.004" Sq. Substrate is also Gate. At 25°C free air temperature: NJ450 Process Static Electrical Characteristics Gate Source Breakdown Voltage V(BR)GSS Reverse Gate Leakage Current IGSS Drain Saturation Current (Pulsed) IDSS Gate Source Cutoff Voltage VGS(OFF) Min Typ – 25 – 30 Max Unit Test Conditions V IG = – 1 µA, VDS = ØV – 1000 pA VGS = – 15V, VDS = ØV 5 600 mA VDS = 15V, VGS = ØV – 0.1 – 10 V VDS = 15V, ID = 1 nA 7 Ω ID = 1 mA, VGS = ØV f = 1 kHz – 50 Dynamic Electrical Characteristics Drain Source ON Resistance rds(on) Forward Transconductance gfs 250 mS VDS = 15V, VGS = ØV f = 1 kHz Input Capacitance Ciss 20 pF VDS = ØV, VGS = – 10V f = 1 MHz Feedback Capacitance Crss 10 pF VDS = ØV, VGS = – 10V f = 1 MHz 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 www.interfet.com Databook.fxp 1/13/99 2:09 PM Page F-37 F-37 01/99 NJ450 Process Silicon Junction Field-Effect Transistor Drain Current as a Function of VDS Gfs as a Function of VGS(OFF) VGS(OFF) = Ð4.5 V 300 450 Transconductance in mS Drain Current in mA VGS = Ø V 250 VGS = –1 V 200 VGS = –2 V 150 VGS = –3 V 100 VGS = –4 V 5 10 15 0 –1 –2 –3 –4 –5 Drain to Source Voltage in Volts Gate Source Cutoff Voltage in Volts Drain Saturation Current as a Function of VGS(OFF) RDS as a Function of VGS(OFF) 500 400 300 200 100 0 –1 –2 –3 –4 –5 –6 30 25 20 15 10 5 –6 0 –1 –2 –3 –4 –5 Drain Source Cutoff Voltage in Volts Gate Source Cutoff Voltage in Volts Input Capacitance as a Function of VGS Feedback Capacitance as a Function of VGS 100 –6 100 Feedback Capacitance in pF Input Capacitance in pF 150 20 Drain Source (on) Resistance in Ω Drain Saturation Current in mA 0 300 80 VDS = Ø V 60 VDS = 5 V 40 VDS = 10 V 20 0 –4 –8 – 12 Gate Source Voltage in Volts – 16 80 60 VDS = Ø V 40 VDS = 5 V VDS = 10 V 20 0 –4 –8 – 12 Gate Source Voltage in Volts – 16