INTERFET NJ26

Databook.fxp 1/13/99 2:09 PM Page F-8
F-8
01/99
NJ26 Process
Silicon Junction Field-Effect Transistor
¥ Low-Noise, High Gain Amplifier
G
Absolute maximum ratings at TA = 25¡C
Gate Current, Ig
Operating Junction Temperature, Tj
Storage Temperature, Ts
10 mA
+150°C
– 65°C to +175°C
S-D
Devices in this Databook based on the NJ26A Process.
S-D
Datasheet
2N4416, 2N4416A
2N5484, 2N5485
2N5486
J304, J305
VCR11N
G
Die Size = 0.016" X 0.016"
All Bond Pads = 0.004" Sq.
Substrate is also Gate.
At 25°C free air temperature:
NJ26 Process
Static Electrical Characteristics
Gate Source Breakdown Voltage
V(BR)GSS
Reverse Gate Leakage Current
IGSS
Drain Saturation Current (Pulsed)
IDSS
Gate Source Cutoff Voltage
VGS(OFF)
Min
Typ
– 30
– 40
Max
Unit
Test Conditions
V
IG = – 1 µA, VDS = ØV
– 100
pA
VGS = – 20V, VDS = ØV
2
22
mA
VDS = 15V, VGS = ØV
–1
–5
V
VDS = 15V, ID = 1 nA
mS
VDS = 15V, VGS = ØV
f = 1 kHz
– 10
Dynamic Electrical Characteristics
Forward Transconductance
gfs
6
Input Capacitance
Ciss
4.3
5.0
pF
VDS = 15V, VGS = ØV
f = 1 MHz
Feedback Capacitance
Crss
1
1.5
pF
VDS = 15V, VGS = ØV
f = 1 MHz
Equivalent Noise Voltage
e¯ N
4
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
nV/√HZ VDS = 10V, ID = 5 mA
f = 1 kHz
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Databook.fxp 1/13/99 2:09 PM Page F-9
F-9
01/99
NJ26 Process
Silicon Junction Field-Effect Transistor
Drain Current as a Function of VDS
Gfs as a Function of VGS(OFF)
VGS(OFF) = Ð2.1 V
10
10
Transconductance in mS
Drain Current in mA
VGS = Ø V
8
VGS = – 0.5 V
6
VGS = –1.0 V
4
VGS = –1.5 V
2
VGS = –2.0 V
5
10
15
4
2
0
–1
–2
–3
–4
–5
Drain to Source Voltage in Volts
Gate Source Cutoff Voltage in Volts
Drain Saturation Current as a Function of VGS(OFF)
IDSS as a Function of RDS
25
20
15
10
5
0
–1
–2
–3
–4
–5
–6
–6
20
16
12
8
4
100
150
200
250
Gate Source Cutoff Voltage in Volts
Drain Source (ON) Resistance in Ω
Input Capacitance as a Function of VGS
Feedback Capacitance as a Function of VGS
300
2.5
Feedback Capacitance in pF
5
Input Capacitance in pF
6
20
Drain Saturation Current in mA
Drain Saturation Current in mA
0
8
VDS = Ø V
4
VDS = 15 V
3
2
1
0
–4
–8
– 12
Gate Source Voltage in Volts
– 16
VDS = Ø V
2.0
VDS = 5 V
1.5
1.0
0.5
0
–4
–8
– 12
Gate Source Voltage in Volts
– 16