Databook.fxp 1/13/99 2:09 PM Page F-6 F-6 01/99 NJ16 Process Silicon Junction Field-Effect Transistor ¥ Low Current Switch ¥ General Purpose Amplifier ¥ High Breakdown Voltage G S-D Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C – 65°C to +175°C S-D Devices in this Databook based on the NJ16 Process. Datasheet Datasheet Datasheet 2N3954, 2N3955 2N3956 2N3957, 2N3958 2N4220, 2N4220A 2N4221, 2N4221A 2N4338, 2N4339 2N4340, 2N4341 2N4867, 2N4867A 2N4868, 2N4868A 2N4869, 2N4869A 2SK17, 2SK40 2SK59, 2SK105 IFN17, IFN40 IFN59, IFN105 J201, J202 J203, J204 J230, J231 J232 J500, J501 J502, J503 J504, J505 J506, J507 J508, J509 J510, J511 J553, J554 J555, J556 J557 U553, U554 U555, U556 U557 VCR4N G Die Size = 0.017" X 0.017" All Bond Pads = 0.004" Sq. Substrate is also Gate. At 25°C free air temperature: NJ16 Process Static Electrical Characteristics Gate Source Breakdown Voltage V(BR)GSS Reverse Gate Leakage Current IGSS Drain Saturation Current (Pulsed) IDSS Gate Source Cutoff Voltage VGS(OFF) Min Typ – 50 – 60 Max Unit Test Conditions V IG = – 1 µA, VDS = ØV – 100 pA VGS = – 30V, VDS = ØV 0.2 9 mA VDS = 15V, VGS = ØV – 0.8 – 5.5 V VDS = 15V, ID = 1 nA – 10 Dynamic Electrical Characteristics Forward Transconductance gfs 2.2 mS VDS = 15V, VGS = ØV f = 1 kHz Input Capacitance Ciss 3.5 pF VDS = 15V, VGS = ØV f = 1 MHz Feedback Capacitance Crss 1.2 pF VDS = 15V, VGS = ØV f = 1 MHz Equivalent Noise Voltage e¯ N 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 6 nV/√HZ VDS = 10V, ID = 5 mA f = 1 kHz www.interfet.com Databook.fxp 1/13/99 2:09 PM Page F-7 F-7 01/99 NJ16 Process Silicon Junction Field-Effect Transistor Drain Current as a Function of VDS Gfs as a Function of VGS(OFF) VGS(OFF) = Ð2.5 V 5 3.0 Transconductance in mS Drain Current in µA VGS = Ø V 4 VGS = – 0.5 V 3 VGS = –1.0 V 2 VGS = –1.5 V 1 VGS = –2.0 V 5 10 15 1.0 0.5 0 –1 –2 –3 –4 –5 Drain to Source Voltage in Volts Gate Source Cutoff Voltage in Volts Drain Saturation Current as a Function of VGS(OFF) Noise as a Function of Frequency –6 30 10 8 6 4 2 0 –1 –2 –3 –4 –5 20 10 –6 10 100 1K 10K Gate Source Cutoff Voltage in Volts Frequency in Hz Input Capacitance as a Function of VGS Feedback Capacitance as a Function of VGS 100K 5 Feedback Capacitance in pF 7 Input Capacitance in pF 1.5 20 Noise Voltage in nV/√Hz Drain Saturation Current in mA 0 2.5 6 VDS = Ø V 5 VDS = 5 V 4 VDS = 10 V 3 2 0 –4 –8 – 12 Gate Source Voltage in Volts – 16 4 VDS = Ø V 3 VDS = 5 V 2 VDS = 10 V 1 0 –4 –8 – 12 Gate Source Voltage in Volts – 16