IPS IPS825-40B

IPS825-xxB
IP Semiconductor Co., Ltd.
IPS825 series of silicon controlled rectifiers are
specifically designed for medium power switching and
phase control applications.
High current density due to double mesa echnology;
SIPOS and Glass passivation technology used has reliable
operation up to 125℃ junction temperature. Low Igt parts
available.
Typical applications are in rectification (softstart) and
these products are designed to be used with international
recetifier input diodes, switches and output recetifiers
which are available in identical package outlines.
MAIN FEATURES
Symbol
Value
Unit
IT(RMS)
25
A
VDRM / VRRM
800
V
VTM
≤ 1.6
V
TO-220B
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
IT(RMS)
25
A
Average on–state current (Tc = 110℃, 180º conduction half sine wave)
IT(AV)
16
A
Storage Junction Temperature Range
Operating Junction Temperature Range
Tstg
Tj
-40 to +150
-40 to +125
℃
VDRM
VRRM
800
800
V
VDSM
VRSM
900
900
V
RMS on–state current (Tc = 110℃, 180º conduction half sine wave)
Repetitive Peak Off-state Voltage
Repetitive Peak Reverse Voltage
Non Repetitive Peak Off-state Voltage
Non Repetitive Peak Reverse Voltage
Tj = 25℃
Tj = 25℃
Tj = 25℃
Tj = 25℃
One cycle Non Repetitive surge current, 10ms sine pulse, rated VRRM
applied
250
ITSM
One cycle Non Repetitive surge current, 10ms sine pulse, no voltage
applied
A
260
I²t Value for fusing, 10ms sine pulse, rated VRRM applied
310
I²t
Critical rate of rise of turned – on current (IG = 2 X IGT, Tj = 125℃)
Peak gate current
tp = 20us, Tj = 125℃
Average gate power dissipation
Tj = 125℃
A²s
320
I²t Value for fusing, 10ms sine pulse, no voltage applied
dI/dt
100
A/us
IGM
4
A
PG(AV)
1
W
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea
Tel : +82-70-7574-2839, Fax : +82-2-6280-6382, [email protected]
1
IPS825-xxB
ELECTRICAL CHARACTERISTICS (Tj = 25 ℃ unless otherwise specified)
IPS825-xxB
Symbol
Test Condition
Unit
40
IGT
Required DC gate current to trigger at 25℃
at - 40℃
at 125℃
VGT
Required DC voltage to trigger
at 25℃
(anode supply = 6V, resistive load) at - 40℃
at 125℃
VGD
DC gate voltage not to trigger
(Tj = 125℃, VDRM = rated value)
MAX
40
100
15
mA
MAX
1.5
2.5
1.0
V
MAX
0.2
V
IL
IG = 1.2 IGT
MAX
80
mA
IH
Holding current
MAX
60
mA
VD = 67% VDRM gate open Tj = 125 ℃
MIN
500
V/us
dV/dt
STATIC CHARACTERISTICS
Symbol
VTM
Test Conditions
Value
(MAX)
Unit
ITM = 50A, tp = 380uS
Tj = 25℃
1.6
V
VD = VDRM
Tj = 25℃
10
uA
VR = VRRM
Tj = 125℃
4
mA
Value
Unit
1.0
℃/W
IDRM / IRRM
THERMAL RESISTANCES
Symbol
Parameter
Rth (j – c)
Junction to case for DC
TO-220B
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea
Tel : +82-70-7574-2839, Fax : +82-2-6280-6382, [email protected]
2
IPS825-xxB
PACKAGE MECHANICAL DATA
TO-220B
Millimeters
Min
Typ
Max
A
4.4
4.6
B
0.61
0.88
C
0.46
0.70
C2
1.23
1.32
C3
2.4
2.72
D
8.6
9.7
E
9.8
10.4
F
6.2
6.6
G
4.8
5.4
H
28
29.8
L1
3.75
L2
1.14
1.7
L3
2.65
2.95
V
40º
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea
TEL : +82-70-7574-2839, Fax : +82-2-6280-6382, [email protected]
3
IPS825-xxB
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea
Tel : +82-70-7574-2839, Fax : +82-2-6280-6382, [email protected]
4