IPS825-xxB IP Semiconductor Co., Ltd. IPS825 series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. High current density due to double mesa echnology; SIPOS and Glass passivation technology used has reliable operation up to 125℃ junction temperature. Low Igt parts available. Typical applications are in rectification (softstart) and these products are designed to be used with international recetifier input diodes, switches and output recetifiers which are available in identical package outlines. MAIN FEATURES Symbol Value Unit IT(RMS) 25 A VDRM / VRRM 800 V VTM ≤ 1.6 V TO-220B ABSOLUTE MAXIMUM RATINGS Parameter Symbol Value Unit IT(RMS) 25 A Average on–state current (Tc = 110℃, 180º conduction half sine wave) IT(AV) 16 A Storage Junction Temperature Range Operating Junction Temperature Range Tstg Tj -40 to +150 -40 to +125 ℃ VDRM VRRM 800 800 V VDSM VRSM 900 900 V RMS on–state current (Tc = 110℃, 180º conduction half sine wave) Repetitive Peak Off-state Voltage Repetitive Peak Reverse Voltage Non Repetitive Peak Off-state Voltage Non Repetitive Peak Reverse Voltage Tj = 25℃ Tj = 25℃ Tj = 25℃ Tj = 25℃ One cycle Non Repetitive surge current, 10ms sine pulse, rated VRRM applied 250 ITSM One cycle Non Repetitive surge current, 10ms sine pulse, no voltage applied A 260 I²t Value for fusing, 10ms sine pulse, rated VRRM applied 310 I²t Critical rate of rise of turned – on current (IG = 2 X IGT, Tj = 125℃) Peak gate current tp = 20us, Tj = 125℃ Average gate power dissipation Tj = 125℃ A²s 320 I²t Value for fusing, 10ms sine pulse, no voltage applied dI/dt 100 A/us IGM 4 A PG(AV) 1 W 4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea Tel : +82-70-7574-2839, Fax : +82-2-6280-6382, [email protected] 1 IPS825-xxB ELECTRICAL CHARACTERISTICS (Tj = 25 ℃ unless otherwise specified) IPS825-xxB Symbol Test Condition Unit 40 IGT Required DC gate current to trigger at 25℃ at - 40℃ at 125℃ VGT Required DC voltage to trigger at 25℃ (anode supply = 6V, resistive load) at - 40℃ at 125℃ VGD DC gate voltage not to trigger (Tj = 125℃, VDRM = rated value) MAX 40 100 15 mA MAX 1.5 2.5 1.0 V MAX 0.2 V IL IG = 1.2 IGT MAX 80 mA IH Holding current MAX 60 mA VD = 67% VDRM gate open Tj = 125 ℃ MIN 500 V/us dV/dt STATIC CHARACTERISTICS Symbol VTM Test Conditions Value (MAX) Unit ITM = 50A, tp = 380uS Tj = 25℃ 1.6 V VD = VDRM Tj = 25℃ 10 uA VR = VRRM Tj = 125℃ 4 mA Value Unit 1.0 ℃/W IDRM / IRRM THERMAL RESISTANCES Symbol Parameter Rth (j – c) Junction to case for DC TO-220B 4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea Tel : +82-70-7574-2839, Fax : +82-2-6280-6382, [email protected] 2 IPS825-xxB PACKAGE MECHANICAL DATA TO-220B Millimeters Min Typ Max A 4.4 4.6 B 0.61 0.88 C 0.46 0.70 C2 1.23 1.32 C3 2.4 2.72 D 8.6 9.7 E 9.8 10.4 F 6.2 6.6 G 4.8 5.4 H 28 29.8 L1 3.75 L2 1.14 1.7 L3 2.65 2.95 V 40º 4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea TEL : +82-70-7574-2839, Fax : +82-2-6280-6382, [email protected] 3 IPS825-xxB 4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea Tel : +82-70-7574-2839, Fax : +82-2-6280-6382, [email protected] 4