1000V 30A APT30DQ100K APT30DQ100KG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. ULTRAFAST SOFT RECOVERY RECTIFIER DIODE (K) PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Free Wheeling Diode -Motor Controllers -Converters -Inverters • Snubber Diode • Ultrafast Recovery Times • Low Losses • Soft Recovery Characteristics • Low Noise Switching • Popular TO-220 Package • Cooler Operation • Low Forward Voltage • Higher Reliability Systems • Low Leakage Current • Increased System Power Density • PFC 1 2 2 1 • Avalanche Energy Rated 1 - Cathode 2 - Anode Back of Case - Cathode MAXIMUM RATINGS Symbol VR All Ratings: TC = 25°C unless otherwise specified. Characteristic / Test Conditions APT30DQ100K(G) UNIT 1000 Volts Maximum D.C. Reverse Voltage VRRM Maximum Peak Repetitive Reverse Voltage VRWM Maximum Working Peak Reverse Voltage IF(AV) Maximum Average Forward Current (TC = 102°C, Duty Cycle = 0.5) 30 RMS Forward Current (Square wave, 50% duty) 43 IF(RMS) IFSM Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms) EAVL Avalanche Energy (1A, 40mH) TJ,TSTG TL Amps 150 20 mJ -55 to 175 Operating and StorageTemperature Range °C 300 Lead Temperature for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS VF Characteristic / Test Conditions Forward Voltage IRM Maximum Reverse Leakage Current CT Junction Capacitance, VR = 200V MIN TYP MAX IF = 30A 2.5 3.0 IF = 60A 3.06 IF = 30A, TJ = 125°C 1.92 Volts VR = 1000V 100 VR = 1000V, TJ = 125°C 500 Microsemi Website - http://www.microsemi.com 26 UNIT µA pF 053-4240 Rev C 2-2010 Symbol DYNAMIC CHARACTERISTICS Symbol APT30DQ100K(G) Characteristic Test Conditions trr Reverse Recovery Time trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM IF = 1A, diF/dt = -100A/µs, VR = 30V, TJ = 25°C trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM VR = 667V, TC = 25°C IF = 30A, diF/dt = -200A/µs VR = 667V, TC = 125°C Maximum Reverse Recovery Current trr Reverse Recovery Time Qrr IF = 30A, diF/dt = -1000A/µs Reverse Recovery Charge IRRM VR = 667V, TC = 125°C Maximum Reverse Recovery Current TYP MAX UNIT - 24 - 295 - 440 - 4 - 330 ns - 1550 nC - 8 - 150 ns - 2250 nC - 25 Amps MIN TYP ns IF = 30A, diF/dt = -200A/µs Maximum Reverse Recovery Current MIN nC - - Amps Amps THERMAL AND MECHANICAL CHARACTERISTICS Symbol RθJC Characteristic / Test Conditions Junction-to-Case Thermal Resistance WT Package Weight Torque MAX UNIT .80 °C/W 0.07 oz 9.9 g Maximum Mounting Torque 10 lb•in 1.1 N•m Microsemi reserves the right to change, without notice, the specifications and information contained herein. 0.8 D = 0.9 0.7 0.6 0.7 0.5 0.5 0.4 0.3 Note: PDM Z JC, THERMAL IMPEDANCE (°C/W) θ 0.9 0.3 t1 t2 0.2 0 t Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC 0.1 0.1 SINGLE PULSE 0.05 10 -5 10 -4 10-3 10-2 0.1 1 053-4240 Rev C 2-2010 RECTANGULAR PULSE DURATION (seconds) FIGURE 1. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION TYPICAL PERFORMANCE CURVES APT30DQ100K(G) 100 80 70 60 TJ = 175°C 50 40 TJ = 125°C 30 TJ = 25°C 20 TJ = -55°C 10 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 2. Forward Current vs. Forward Voltage Qrr, REVERSE RECOVERY CHARGE (nC) 4000 T = 125°C J V = 667V R 3500 60A 3000 2500 2000 30A 1500 15A 1000 500 0 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 4. Reverse Recovery Charge vs. Current Rate of Change R 60A 400 300 30A 15A 200 100 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE(A/µs) Figure 3. Reverse Recovery Time vs. Current Rate of Change 35 T = 125°C J V = 667V R 30 trr 20 30A 15 15A 10 5 0 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 5. Reverse Recovery Current vs. Current Rate of Change Qrr Duty cycle = 0.5 T = 175°C 45 1.0 trr 60A 25 50 1.2 J 40 IRRM 35 0.8 IF(AV) (A) Kf, DYNAMIC PARAMETERS (Normalized to 1000A/µs) T = 125°C J V = 667V 0 IRRM, REVERSE RECOVERY CURRENT (A) IF, FORWARD CURRENT (A) 90 trr, REVERSE RECOVERY TIME (ns) 500 0.6 30 25 20 0.4 Qrr 15 10 0.2 5 0.0 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 6. Dynamic Parameters vs. Junction Temperature 0 25 50 75 100 125 150 175 Case Temperature (°C) Figure 7. Maximum Average Forward Current vs. CaseTemperature 140 120 100 80 60 40 20 0 1 10 100 200 VR, REVERSE VOLTAGE (V) Figure 8. Junction Capacitance vs. Reverse Voltage 053-4240 Rev C 2-2010 CJ, JUNCTION CAPACITANCE (pF) 160 APT30DQ100K(G) Vr diF /dt Adjust +18V APT10035LLL 0V D.U.T. 30μH trr/Qrr Waveform PEARSON 2878 CURRENT TRANSFORMER Figure 9. Diode Test Circuit 1 IF - Forward Conduction Current 2 diF /dt - Rate of Diode Current Change Through Zero Crossing. 3 IRRM - Maximum Reverse Recovery Current. 4 trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. 5 1 4 Zero 5 0.25 IRRM 3 2 Qrr - Area Under the Curve Defined by IRRM and trr. Figure 10, Diode Reverse Recovery Waveform and Definitions TO-220 (K) Package Outline e3 100% Sn 0.404 [10.26] 0.393 [9.98] Cathode 0.114 [2.90] 0.102 [2.59] 0.186 [4.72] 0.174 [4.42] 0.058 [1.47] 0.047 [1.19] ø0.153 [3.89] ø0.149 [3.78] 0.508 [12.90] 0.492 [12.50] 0.362 [9.19] 0.354 [8.99] 0.154 [3.91] 0.134 [3.40] 0.531 [13.49] 0.515 [13.08] 0.110 [2.79] 0.099 [2.51] 0.057 [1.45] 0.047 [1.19] 053-4240 Rev C 2-2010 Cathode Anode 0.100 [2.54] TYP 0.204 [5.18] 0.196 [4.98] 0.034 [0.86] 0.030 [0.76] 0.018 [0.46] 0.014 [0.36] Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.