600V 8A APT8DQ60KCT APT8DQ60KCTG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. ULTRAFAST SOFT RECOVERY RECTIFIER DIODE (KCT) PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Free Wheeling Diode -Motor Controllers -Converters -Inverters • Snubber Diode • Ultrafast Recovery Times • Low Losses • Soft Recovery Characteristics • Low Noise Switching • Popular TO-220 Package • Cooler Operation • Low Forward Voltage • Higher Reliability Systems • Low Leakage Current • Increased System Power Density • PFC • Avalanche Energy Rated MAXIMUM RATINGS Symbol VR Characteristic / Test Conditions VRWM Maximum Working Peak Reverse Voltage IF(AV) Maximum Average Forward Current (TC = 128°C, Duty Cycle = 0.5) 1 2 3 1 3 2 1 - Anode 1 2 - Common Cathode Back of Case - Cathode 3 - Anode 2 APT8DQ60KCT(G) UNIT 600 Volts 8 16 RMS Forward Current (Square wave, 50% duty) IFSM Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms) EAVL Avalanche Energy (1A, 40mH) TL 0 Maximum D.C. Reverse Voltage Maximum Peak Repetitive Reverse Voltage TJ,TSTG -22 All Ratings Per Leg: TC = 25°C unless otherwise specified. VRRM IF(RMS) TO Amps 110 20 mJ -55 to 175 Operating and StorageTemperature Range °C 300 Lead Temperature for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS Forward Voltage IRM Maximum Reverse Leakage Current CT Junction Capacitance, VR = 200V MIN TYP MAX IF = 8A 2.0 2.4 IF = 16A 2.5 IF = 8A, TJ = 125°C 1.5 VR = 600V Microsemi Website - http://www.microsemi.com Volts 25 VR = 600V, TJ = 125°C 500 16 UNIT µA pF 7-2006 VF Characteristic / Test Conditions 053-4211 Rev E Symbol DYNAMIC CHARACTERISTICS Symbol APT8DQ60KCT(G) Characteristic Test Conditions trr Reverse Recovery Time trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM IF = 1A, diF/dt = -100A/µs, VR = 30V, TJ = 25°C Reverse Recovery Time Qrr Reverse Recovery Charge IF = 8A, diF/dt = -200A/µs Maximum Reverse Recovery Current trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM VR = 400V, TC = 25°C Maximum Reverse Recovery Current trr IRRM IF = 8A, diF/dt = -200A/µs VR = 400V, TC = 125°C IF = 8A, diF/dt = -1000A/µs Maximum Reverse Recovery Current VR = 400V, TC = 125°C MIN TYP MAX UNIT - 14 - 19 - 17 - 2 - 90 ns - 160 nC - 3 - 43 ns - 250 nC - 11 Amps MIN TYP ns nC - - Amps Amps THERMAL AND MECHANICAL CHARACTERISTICS Symbol RθJC WT Torque Characteristic / Test Conditions Junction-to-Case Thermal Resistance Package Weight MAX UNIT 2.7 °C/W 0.07 oz 1.9 g Maximum Mounting Torque 10 lb•in 1.1 N•m Microsemi reserves the right to change, without notice, the specifications and information contained herein. 2.5 D = 0.9 2.0 0.7 1.0 0.5 Note: 0.3 PDM 1.5 0.1 0.05 Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC 0 10-5 t SINGLE PULSE 10-4 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION 7-2006 TJ (°C) 053-4211 Rev E t1 t2 0.5 TC (°C) 1.93 0.773 Dissipated Power (Watts) 0.00078 ZEXT Z JC, THERMAL IMPEDANCE (°C/W) θ 3.0 0.0246 ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction. FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL TYPICAL PERFORMANCE CURVES 25 TJ = 175°C 20 15 TJ = 125°C 10 TJ = 25°C 5 0 TJ = -55°C 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 2. Forward Current vs. Forward Voltage 0 Qrr, REVERSE RECOVERY CHARGE (nC) 400 T = 125°C J V = 400V R 350 16A 300 250 8A 200 150 4A 100 50 0 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 4. Reverse Recovery Charge vs. Current Rate of Change 1.2 16A 80 8A 4A 60 40 20 14 T = 125°C J V = 400V 16A R 12 10 8 6 8A 4 4A 2 0 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 5. Reverse Recovery Current vs. Current Rate of Change 20 Duty cycle = 0.5 T = 175°C 18 trr J 16 trr IRRM 0.8 R 100 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE(A/µs) Figure 3. Reverse Recovery Time vs. Current Rate of Change Qrr 1.0 APT8DQ60KCT(G) T = 125°C J V = 400V 0 14 IF(AV) (A) Kf, DYNAMIC PARAMETERS (Normalized to X000A/µs) trr, REVERSE RECOVERY TIME (ns) 120 IRRM, REVERSE RECOVERY CURRENT (A) IF, FORWARD CURRENT (A) 30 0.6 12 10 8 0.4 Qrr 0.2 6 4 2 0.0 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 6. Dynamic Parameters vs. Junction Temperature 0 25 50 75 100 125 150 175 Case Temperature (°C) Figure 7. Maximum Average Forward Current vs. CaseTemperature 50 40 7-2006 30 20 10 0 1 10 100 200 VR, REVERSE VOLTAGE (V) Figure 8. Junction Capacitance vs. Reverse Voltage 053-4211 Rev E CJ, JUNCTION CAPACITANCE (pF) 60 APT8DQ60KCT(G) Vr diF /dt Adjust +18V APT6038BLL 0V D.U.T. 30µH trr/Qrr Waveform PEARSON 2878 CURRENT TRANSFORMER Figure 9. Diode Test Circuit 1 IF - Forward Conduction Current 2 diF /dt - Rate of Diode Current Change Through Zero Crossing. 3 IRRM - Maximum Reverse Recovery Current. 4 trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. 5 1 4 Zero 5 3 0.25 IRRM 2 Qrr - Area Under the Curve Defined by IRRM and trr. Figure 10, Diode Reverse Recovery Waveform and Definitions TO-220 (KCT) Package Outline e3 100% Sn 1.39 (.055) 0.51 (.020) 16.51 (.650) 14.23 (.560) Cathode 4.08 (.161) Dia. 3.54 (.139) 3.42 (.135) 2.54 (.100) 10.66 (.420) 9.66 (.380) 5.33 (.210) 4.83 (.190) 6.85 (.270) 5.85 (.230) 6.35 (.250) MAX. 053-4211 Rev E 7-2006 0.50 (.020) 0.41 (.016) 2.92 (.115) 2.04 (.080) 4.82 (.190) 3.56 (.140) 14.73 (.580) 12.70 (.500) 1.01 (.040) 3-Plcs. 0.38 (.015) 2.79 (.110) 2.29 (.090) 5.33 (.210) 4.83 (.190) Dimensions in Millimeters and (Inches) Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved. Anode Cathode Anode 1.77 (.070) 3-Plcs. 1.15 (.045)