APT2X101DL40J 400V 100A Ultrafast Soft Recovery Dual Rectifier Diode PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Ultrafast Recovery Times (trr) • Low Losses • Soft Recoverery Characteristics • Low Noise Switching • Free Wheeling Diode - Motor Controllers - Converters • Low Forward Voltage • Cooler Operation • Low Forward Voltage • Higher Reliability Systems • • • • • High Blocking Voltage • Increased System Power Density Snubber Diode Uninterruptible Power Supply Induction Heating High Speed Rectifiers 3 2 27 2 T- 4 1 SO "UL Recongnized" file # 145592 ISOTOP fi 2 3 • Low Leakage Current 1 4 APT2X101DL40J All Ratings per Diode: TC = 25°C unless otherwise specified. MAXIMUM RATINGS Symbol VR Characteristic / Test Conditions Ratings Unit 400 Volts Maximum D.C. Reverse Voltage VRRM Maximum Peak Repetitive Reverse Voltage VRWM Maximum Working Peak Reverse Voltage IF(AV) Maximum Average Forward current (TC = 127°C, Duty Cycle = 0.5) 100 IF(RMS) RMS Forward Currrent (Square wave, 50% duty) 204 Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3 ms) 1000 IFSM TJ, TSTG Operating and Storage Junction Temperature Range Amps -55 to 175 °C STATIC ELECTRICAL CHARACTERISTICS VF Characteristic / Test Conditions Forward Voltage Min Typ Max IF = 100A 1.0 1.125 IF = 150A 1.1 IF = 200A 1.2 Unit Volts IF = 100A, TJ = 150°C .95 VR = 400V 500 VR = 400V, TJ = 125°C 1000 IRM Maximum Reverse Leakage Current CT Junction Capacitance, VR = 200V 215 pF LS Series Inductance _Lead to Lead 5mm from Base) 10 nH Microsemi Website - http://www.microsemi.com μA 052-6322 Rev E 9 - 2009 Symbol APT2X101DL40J DYNAMIC CHARACTERISTICS Symbol Characteristic / Test Conditions trr Reverse Recovery Time trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM Maximum Reverse Recovery Current trr Min Typ IF = 1A, diF/dt = -100A/μs, VR = 30V, TJ = 25°C Max Unit 40 ns 120 IF = 100A, diF/dt = -200A/μs VR = 268V, TC = 25°C Reverse Recovery Time IF = 100A, diF/dt = -200A/μs VR = 268V, TC = 125°C 830 nC 13 Amps 240 ns 3500 nC Qrr Reverse Recovery Charge IRRM Maximum Reverse Recovery Current 25 Amps trr Reverse Recovery Time 160 ns Qrr Reverse Recovery Charge 6600 nC IRRM Maximum Reverse Recovery Current 76 Amps IF = 100A, diF/dt = -1000A/ μs VR = 268V, TC = 125°C THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic / Test Conditions Min RθJC Junction-to-Case Thermal Resistance RθJA Junction-to-Ambient Thermal Resistance Typ Max 0.42 °C/W WT 20 1.03 oz 29.2 g Package Weight Torque 10 lb·in 1.1 N·m Maximum Mounting Torque Microsemi reserves the right to change, without notice, the specifications and information contained herein. 0.40 0.35 0.30 0.25 0.20 Note: 0.15 PDM ZθJC, THERMAL IMPEDANCE (°C/W) 0.45 t1 0.1 t2 t Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC 0.05 0 10-5 10-4 10-3 10-2 10-1 1 10 RECTANGULAR PULSE DURATION (seconds) FIGURE 1. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION 052-6322 Rev E 9 - 2009 Unit APT2X101DL40J TYPICAL PERFORMANCE CURVES 300 400 trr, COLLECTOR CURRENT (A) 300 250 200 150 TJ= 150°C 100 TJ= 125°C 50 0 TJ= 25°C 0 R 100A 200A 150A 50A 200 150 100 50 TJ= 55°C 0.5 1 1.5 2 2.5 VF, ANODE-TO-CATHODE VOLTAGE (V) FIGURE 2, Forward Current vs. Forward Voltage 9000 200A T = 125°C J V = 268V 8000 R 100A 7000 150A 6000 Qrr, REVERSE RECOVERY CHARGE (nC) T = 125°C J V = 268V 250 5000 50A 4000 3000 2000 1000 0 0 200 400 600 800 1000 -diF/dt, CURRENT RATE OF CHANGE (A/μs) FIGURE 4, Reverse Recovery Charge vs. Current Rate of Change 1.4 0 0 200 400 600 800 1000 -diF/dt, CURRENT RATE OF CHANGE (A/μs) FIGURE 3, Reverse Recovery Time vs. Current Rate of Change 90 T = 125°C 200A 50A J V = 268V 80 R IRRM, REVERSE RECOVERY CURRENT (A) IF, FORWARD CURRENT (A) 350 100A 70 60 150A 50 40 30 20 10 0 0 200 400 600 800 1000 -diF/dt, CURRENT RATE OF CHANGE (A/μs) FIGURE 5, Reverse Recovery Current vs. Current Rate of Change 250 200 1.0 IF(AV) (A) Kf, DYNAMIC PARAMETERS (Normalized to 1000A/μs) 1.2 0.8 tRR 0.6 IRRM 150 100 QRR 0.4 50 0.2 Duty cycle = 0.5 TJ = 45°C 0 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 6, Dynamic Parameters vs Junction Temperature 0 25 50 75 100 125 150 175 Case Temperature (°C) FIGURE 7, Maximum Average Forward Current vs. Case Temperature 1750 1500 1250 1000 750 500 250 0 1 10 100 200 VR, REVERSE VOLTAGE (V) FIGURE 8, Junction Capacitance vs. Reverse Voltage 052-6322 Rev E 9 - 2009 CJ, JUNCTION CAPACITANCE (pF) 2000 APT2X101DL40J Vr diF /dt Adjust +18V 0V D.U.T. trr/Qrr Waveform CURRENT TRANSFORMER Figure 9. Diode Test Circuit 1 IF - Forward Conduction Current 2 diF /dt - Rate of Diode Current Change Through Zero Crossing. 3 IRRM - Maximum Reverse Recovery Current. 4 trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. 1 4 6 Zero 5 5 Qrr - Area Under the Curve Defined by IRRM and trr. 6 diM/dt - Maximum Rate of Current Increase During the Trailing Portion of trr. 3 2 0.25 IRRM Slope = diM/dt Figure 10, Diode Reverse Recovery Waveform and Definitions SOT-227 (ISOTOP®) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 8.9 (.350) 9.6 (.378) Hex Nut M4 H100 (4 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 7.8 (.307) 8.2 (.322) r = 4.0 (.157) (2 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 052-6322 Rev E 9 - 2009 30.1 (1.185) 30.3 (1.193) 1.95 (.077) 2.14 (.084) Cathode 1 Anode 1 Cathode 2 Anode 2 38.0 (1.496) 38.2 (1.504) Dimensions in Millimeters and (Inches) Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.