600V 2x60A APT60D60LCT APT60D60LCTG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Free Wheeling Diode -Motor Controllers -Converters -Inverters • Snubber Diode • Ultrafast Recovery Times • Low Losses • Soft Recovery Characteristics • Low Noise Switching • Popular TO-264 Package • Cooler Operation • Low Forward Voltage • Higher Reliability Systems • Low Leakage Current • Increased System Power Density • PFC TO - 26 1 2 4 3 1 3 2 1 - Anode 1 2 - Common Cathode Back of Case - Cathode 3 - Anode 2 MAXIMUM RATINGS Symbol VR All Ratings Per Leg: TC = 25°C unless otherwise specified. Characteristic / Test Conditions Maximum Peak Repetitive Reverse Voltage VRWM Maximum Working Peak Reverse Voltage IF(AV) Maximum Average Forward Current (TC = 135°C, Duty Cycle = 0.5) IFSM TJ,TSTG TL UNIT 600 Volts Maximum D.C. Reverse Voltage VRRM IF(RMS) APT60D60LCT(G) 60 RMS Forward Current (Square wave, 50% duty) 132 Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms) 600 Amps -55 to 175 Operating and StorageTemperature Range °C 300 Lead Temperature for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS Forward Voltage IRM Maximum Reverse Leakage Current CT Junction Capacitance, VR = 200V MIN TYP MAX IF = 60A 1.6 1.8 IF = 120A 1.9 IF = 60A, TJ = 125°C 1.4 Volts VR = 600V 250 VR = 600V, TJ = 125°C 500 Microsemi Website - http://www.microsemi.com 90 UNIT µA 6-2006 VF Characteristic / Test Conditions pF 053-6017 Rev B Symbol APT60D60LCT(G) DYNAMIC CHARACTERISTICS Symbol Characteristic Test Conditions trr Reverse Recovery Time trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM IF = 1A, diF/dt = -100A/µs, VR = 30V, TJ = 25°C Reverse Recovery Time Qrr Reverse Recovery Charge IF = 60A, diF/dt = -200A/µs VR = 400V, TC = 125°C Maximum Reverse Recovery Current trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM VR = 400V, TC = 25°C Maximum Reverse Recovery Current trr IRRM IF = 60A, diF/dt = -200A/µs IF = 60A, diF/dt = -1000A/µs VR = 400V, TC = 125°C Maximum Reverse Recovery Current MIN TYP MAX UNIT - 40 - 130 - 220 - 4 - 170 ns - 920 nC - 10 - 80 ns - 1900 nC - 38 Amps MIN TYP ns nC - - Amps Amps THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MAX RθJC Junction-to-Case Thermal Resistance .34 RθJA Junction-to-Ambient Thermal Resistance 40 WT Package Weight Torque oz 5.9 g 10 lb•in 1.1 N•m Microsemi reserves the right to change, without notice, the specifications and information contained herein. D = 0.9 0.7 0.20 0.5 Note: 0.3 0.10 t2 Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC 0.1 SINGLE PULSE 0.05 10 -5 10 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION -4 6-2006 TJ (°C) 053-6017 Rev B t1 t 0.05 0 PDM 0.15 TC (°C) 0.129 0.211 Dissipated Power (Watts) 0.0107 0.120 ZEXT Z JC, THERMAL IMPEDANCE (°C/W) θ 0.35 0.25 ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction. FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL °C/W 0.22 Maximum Mounting Torque 0.30 UNIT 200 180 180 160 140 120 100 TJ = 125°C 80 TJ = 25°C 60 TJ = 150°C 40 TJ = -55°C 20 0 0 0.5 1 1.5 2 2.5 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 2. Forward Current vs. Forward Voltage Qrr, REVERSE RECOVERY CHARGE (nC) 2500 T = 125°C J V = 400V R 2000 120A 60A 1500 1000 30A 500 0 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 4. Reverse Recovery Charge vs. Current Rate of Change 1.2 160 60A 140 30A 120 100 80 60 40 40 35 T = 125°C J V = 400V 120A R 30 25 20 60A 15 30A 10 5 0 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 5. Reverse Recovery Current vs. Current Rate of Change 160 Qrr Duty cycle = 0.5 T = 175°C J 140 120 IRRM 100 80 60 0.4 Qrr 0.2 0.0 R 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE(A/µs) Figure 3. Reverse Recovery Time vs. Current Rate of Change trr 0.6 T = 125°C J V = 400V 120A 0 1.0 0.8 APT60D60LCT(G) 20 IF(AV) (A) Kf, DYNAMIC PARAMETERS (Normalized to 1000A/µs) trr trr, REVERSE RECOVERY TIME (ns) 200 IRRM, REVERSE RECOVERY CURRENT (A) IF, FORWARD CURRENT (A) TYPICAL PERFORMANCE CURVES 40 20 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 6. Dynamic Parameters vs. Junction Temperature 0 25 50 75 100 125 150 175 Case Temperature (°C) Figure 7. Maximum Average Forward Current vs. CaseTemperature 600 500 400 6-2006 300 200 100 0 1 10 100 200 VR, REVERSE VOLTAGE (V) Figure 8. Junction Capacitance vs. Reverse Voltage 053-6017 Rev B CJ, JUNCTION CAPACITANCE (pF) 700 APT60D60LCT(G) Vr diF /dt Adjust +18V APT60M75L2LL 0V D.U.T. 30µH trr/Qrr Waveform PEARSON 2878 CURRENT TRANSFORMER Figure 9. Diode Test Circuit 1 IF - Forward Conduction Current 2 diF /dt - Rate of Diode Current Change Through Zero Crossing. 3 IRRM - Maximum Reverse Recovery Current. 4 trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. 5 1 4 Zero 5 3 2 Qrr - Area Under the Curve Defined by IRRM and trr. Figure 10, Diode Reverse Recovery Waveform and Definitions TO-264 (LCT) Package Outline e1 SAC: Tin, Silver, Copper 4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 19.51 (.768) 20.50 (.807) 3.10 (.122) 3.48 (.137) Common Cathode 5.79 (.228) 6.20 (.244) 25.48 (1.003) 26.49 (1.043) 2.29 (.090) 2.69 (.106) 053-6017 Rev B 6-2006 19.81 (.780) 21.39 (.842) 2.29 (.090) 2.69 (.106) Anode 1 Common Cathode Anode 2 0.48 (.019) 0.84 (.033) 2.59 (.102) 3.00 (.118) 0.76 (.030) 1.30 (.051) 2.79 (.110) 3.18 (.125) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) Microsemi’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved. 0.25 IRRM