ISC 2SB904

Inchange Semiconductor
Product Specification
2SB904
Silicon PNP Power Transistors
DESCRIPTION
·With TO-3PN package
·Complement to type 2SD1213
·Low collector saturation voltage
·Large current capacity
APPLICATIONS
·Large current switching of relay drivers,
high-speed inverters,converters
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Tc=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-60
V
VCEO
Collector-emitter voltage
Open base
-30
V
VEBO
Emitter-base voltage
Open collector
-6
V
IC
Collector current
-20
A
ICM
Collector current-peak
-30
A
PC
Collector power dissipation
TC=25℃
60
Ta=25℃
2.5
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
Inchange Semiconductor
Product Specification
2SB904
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-1mA ;RBE=∞
-30
V
V(BR)CBO
Collector-base breakdown voltage
IC=-1mA ;IE=0
-60
V
V(BR)EBO
Emitter-base breakdown voltage
IE=-1mA ;IC=0
-6
V
Collector-emitter saturation voltage
IC=-8A; IB=-0.4A
ICBO
Collector cut-off current
IEBO
VCEsat
CONDITIONS
MIN
TYP.
UNIT
-0.5
V
VCB=-40V; IE=0
-0.1
mA
Emitter cut-off current
VEB=-4V; IC=0
-0.1
mA
hFE-1
DC current gain
IC=-1A ; VCE=-2V
70
hFE-2
DC current gain
IC=-10A ; VCE=-2V
30
Transition frequency
IC=-1A ; VCE=-5V
fT
-0.25
MAX
280
120
MHz
0.3
μs
0.3
μs
0.02
μs
Switching times
ton
Turn-on time
tstg
Storage time
tf
‹
IC=-10A ;IB1=-IB2=-0.5A
VCC=-10V;RL=1Ω
Fall time
hFE-1 Classifications
Q
R
S
70-140
100-200
140-280
2
Inchange Semiconductor
Product Specification
2SB904
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions
3