Inchange Semiconductor Product Specification 2SB1135 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SD1668 ・Low collector saturation voltage ・Wide ASO APPLICATIONS ・Relay drivers ・High speed inverters;converters ・General high current switching application PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Fig.1 simplified outline (TO-220F) and symbol 导体 半 电 固 SYMBOL VCBO VCEO VEBO M E S GE PARAMETER Collector-base voltage N A H INC Collector-emitter voltage Emitter-base voltage R O T UC D N O IC Absolute maximum ratings (Ta=25℃) CONDITIONS MAX UNIT Open emitter -60 V Open base -50 V Open collector -6 V IC Collector current -7 A ICM Collector current-peak -12 A IB Base current -0.5 A PC Collector dissipation Ta=25℃ 2 TC=25℃ 30 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SB1135 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-1mA ;RBE=∞ -50 V V(BR)CBO Collector-base breakdown voltage IC=-1mA ;IE=0 -60 V V(BR)EBO Emitter-base breakdown voltage IE=-1mA ;IC=0 -6 V Collector-emitter saturation voltage IC=-4A; IB=-0.4A -0.4 V ICBO Collector cut-off current VCB=-40V ;IE=0 -100 μA IEBO Emitter cut-off current VEB=-4V; IC=0 -100 μA hFE-1 DC current gain IC=-1A ; VCE=-2V 70 hFE-2 DC current gain IC=-5A ; VCE=-2V 30 Transition frequency IC=-1A ; VCE=-5V VCEsat fT 体 半导 固电 Switching times CONDITIONS ton Turn-on time ts Storage time tf Fall time IC=-2.0A IB1=-IB2=-0.2A hFE-1 Classifications Q R S 70-140 100-200 140-280 2 TYP. MAX UNIT 280 R O T UC D N O IC M E S GE N A H INC MIN 10 MHz 0.2 μs 0.7 μs 0.1 μs Inchange Semiconductor Product Specification 2SB1135 Silicon PNP Power Transistors PACKAGE OUTLINE 导体 半 电 固 D N O IC R O T UC M E S GE N A H INC Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification 2SB1135 Silicon PNP Power Transistors 导体 半 电 固 D N O IC R O T UC M E S GE N A H INC 4