Inchange Semiconductor Product Specification 2SB1136 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SD1669 ・Low collector saturation voltage ・Wide ASO APPLICATIONS ・Relay drivers ・High speed inverters,converters ・General high current switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Fig.1 simplified outline (TO-220F) and symbol 导体 半 电 固 SYMBOL VCBO VCEO VEBO M E S GE PARAMETER N A H INC Collector-base voltage Collector-emitter voltage Emitter-base voltage R O T UC D N O IC Absolute maximum ratings (Ta=25℃) CONDITIONS MAX UNIT Open emitter -60 V Open base -50 V Open collector -6 V IC Collector current -12 A ICM Collector current-peak -15 A PC Collector dissipation Ta=25℃ 2 TC=25℃ 30 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SB1136 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-1mA ;RBE=∞ -50 V V(BR)CBO Collector-base breakdown voltage IC=-1mA ;IE=0 -60 V V(BR)EBO Emitter-base breakdown voltage IE=-1mA ;IC=0 -6 V Collector-emitter saturation voltage IC=-6A; IB=-0.6A -0.4 V ICBO Collector cut-off current VCB=-40V; IE=0 -100 μA IEBO Emitter cut-off current VEB=-4V; IC=0 -100 μA hFE-1 DC current gain IC=-1A ; VCE=-2V 70 hFE-2 DC current gain IC=-5A ; VCE=-2V 30 Transition frequency IC=-1A ; VCE=-5V VCEsat fT 导体 半 电 CONDITIONS 固 Switching times ton Turn-on time ts Storage time tf Fall time IN IC=-2.0A IB1=-IB2=-0.2A hFE-1 Classifications Q R S 70-140 100-200 140-280 2 TYP. MAX UNIT 280 10 TOR C U D ON IC M E ES G N A CH MIN MHz 0.2 μs 0.4 μs 0.1 μs Inchange Semiconductor Product Specification 2SB1136 Silicon PNP Power Transistors PACKAGE OUTLINE 导体 半 电 固 D N O IC R O T UC M E S GE N A H INC Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification 2SB1136 Silicon PNP Power Transistors 导体 半 电 固 D N O IC R O T UC M E S GE N A H INC 4