Inchange Semiconductor Product Specification 2SC1235 Silicon NPN Power Transistors DESCRIPTION ·With TO-66 package ·High collector-emitter voltage : VCEO=300V APPLICATIONS ·For use in line-operated color TV chroma output circuits and sound output circuits. PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 300 V VCEO Collector-emitter voltage Open base 300 V VEBO Emitter-base voltage Open collector 7 V 0.1 A 6.5 W IC Collector current PT Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=70℃ Inchange Semiconductor Product Specification 2SC1235 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-base breakdown voltage IC=50μA ;IE=0 300 V V(BR)CEO Collector-emitter breakdown voltage IC=1mA ;IB=0 300 V V(BR)EBO Emitter-base breakdown voltage IE=50μA ;IC=0 7 V Collector-emitter saturation voltage IC=50mA ;IB=5mA ICBO Collector cut-off current IEBO hFE VCEsat fT 2.0 V VCB=300V;IE=0 5 μA Emitter cut-off current VEB=7V; IC=0 5 μA DC current gain IC=50mA ; VCE=10V Transition frequency IC=10mA ; VCE=20V 2 30 160 60 MHz Inchange Semiconductor Product Specification 2SC1235 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3