ISC 2SC2923

Inchange Semiconductor
Product Specification
2SC2923
Silicon NPN Power Transistors
DESCRIPTION
・With TO-202 package
・High VCEO
・Low COB
APPLICATIONS
・For color TV chroma output applications
PINNING(See Fig.2)
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-202) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
300
V
VCEO
Collector-emitter voltage
Open base
300
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current
0.1
A
ICM
Collector current-peak
0.2
A
PC
Collector power dissipation
Ta=25℃
1.4
TC=25℃
15
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
Inchange Semiconductor
Product Specification
2SC2923
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
VCEsat
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
Collector-emitter saturation voltage
IC=30mA IB=3m A
1.5
V
Base-emitter on voltage
IC=30mA ; VCE=10V
1.2
V
V(BR)CBO
Collector-base breakdown voltage
IC=10μA;IE=0
300
V
V(BR)CEO
Collector-emitter breakdown voltage
IC=100μA; IB=0
300
V
V(BR)EBO
Emitter-base breakdown voltage
IE=10μA; IC=0
7
V
hFE
DC current gain
IC=5mA ; VCE=50V
50
COB
Output capacitance
IE=0; VCB=30V;f=1MHz
fT
Transition frequency
IE=20mA ; VCB=30V
VBE
2
250
2.4
70
pF
MHz
Inchange Semiconductor
Product Specification
2SC2923
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions
3