Inchange Semiconductor Product Specification 2SC515 Silicon NPN Power Transistors DESCRIPTION ・With TO-66 package ・High breakdown voltage APPLICATIONS ・For use in line-operated color TV chroma output circuits and sound output circuits PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-66) and symbol 导体 半 电 固 Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER VCBO Collector-base voltage VCEO Collector-emitter voltage VEBO Emitter-base voltage CONDITIONS IC M E ES G N A CH IN OND Open emitter Open base Open collector R O T UC VALUE UNIT 300 V 300 V 7 V 0.1 A 6 W IC Collector current PD Total power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC515 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=1mA; IB=0 300 V V(BR)CBO Collector-base breakdown voltage IC=10μA; IE=0 300 V V(BR)EBO Emitter-base breakdown voltage IE=10μA; IC=0 7 V Collector-emitter saturation voltage IC=50mA; IB=5m A 2.0 V ICBO Collector cut-off current VCB=200V;IE=0 100 nA IEBO Emitter cut-off current VEB=5V; IC=0 100 nA hFE DC current gain VCEsat CONDITIONS 体 半导 固电 IC=50mA ; VCE=10V MIN N A H INC 2 MAX R O T UC 30 D N O IC M E S GE TYP. 150 UNIT Inchange Semiconductor Product Specification 2SC515 Silicon NPN Power Transistors PACKAGE OUTLINE 导体 半 电 固 D N O IC R O T UC M E S GE N A H INC Fig.2 outline dimensions 3