Inchange Semiconductor Product Specification 2SC3229 Silicon NPN Power Transistors DESCRIPTION ·With TO-220F package ·High voltage: VCEO=300V(min) APPLICATIONS ·For color TV chroma output applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 300 V VCEO Collector-emitter voltage Open base 300 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 100 mA IB Base current 20 mA PC Collector power dissipation 2 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SC3229 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT 1.0 V VCEsat Collector-emitter saturation voltage IC=10mA; IB=1m A V(BR)CEO Collector-emitter breakdown voltage IC=100μA; IB=0 300 V V(BR)EBO Emitter-base breakdown voltage IE=10μA; IC=0 7 V hFE-1 DC current gain IC=0.5mA ; VCE=10V 20 hFE-2 DC current gain IC=20mA ; VCE=10V 30 ICBO Collector cut-off current VCB=240V; IE=0 1.0 μA IEBO Emitter cut-off current VEB=5V; IC=0 1.0 μA COB Output capacitance IE=0; VCB=20V;f=1MHz 4.0 pF fT Transition frequency IE=20mA ; VCB=20V 2 75 200 MHz Inchange Semiconductor Product Specification 2SC3229 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3