ISC 2SC3229

Inchange Semiconductor
Product Specification
2SC3229
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220F package
·High voltage: VCEO=300V(min)
APPLICATIONS
·For color TV chroma output applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
300
V
VCEO
Collector-emitter voltage
Open base
300
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current
100
mA
IB
Base current
20
mA
PC
Collector power dissipation
2
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
Inchange Semiconductor
Product Specification
2SC3229
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
1.0
V
VCEsat
Collector-emitter saturation voltage
IC=10mA; IB=1m A
V(BR)CEO
Collector-emitter breakdown voltage
IC=100μA; IB=0
300
V
V(BR)EBO
Emitter-base breakdown voltage
IE=10μA; IC=0
7
V
hFE-1
DC current gain
IC=0.5mA ; VCE=10V
20
hFE-2
DC current gain
IC=20mA ; VCE=10V
30
ICBO
Collector cut-off current
VCB=240V; IE=0
1.0
μA
IEBO
Emitter cut-off current
VEB=5V; IC=0
1.0
μA
COB
Output capacitance
IE=0; VCB=20V;f=1MHz
4.0
pF
fT
Transition frequency
IE=20mA ; VCB=20V
2
75
200
MHz
Inchange Semiconductor
Product Specification
2SC3229
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions
3