Inchange Semiconductor Product Specification 2SC1446 Silicon NPN Power Transistors DESCRIPTION ·With TO-220 package ·High collector-emitter voltage : VCEO=300V APPLICATIONS ·For use in line-operated color TV chroma output circuits and sound output circuits. PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 300 V VCEO Collector-emitter voltage Open base 300 V VEBO Emitter-base voltage Open collector 5 V 0.15 A 10 W IC Collector current PT Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC1446 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-base breakdown voltage IC=10μA ;IE=0 300 V V(BR)CEO Collector-emitter breakdown voltage IC=1mA ;IB=0 300 V V(BR)EBO Emitter-base breakdown voltage IE=10μA ;IC=0 5 V Collector-emitter saturation voltage IC=50mA ;IB=5mA ICBO Collector cut-off current IEBO hFE VCEsat fT 2.0 V VCB=200V;IE=0 1 μA Emitter cut-off current VEB=4V; IC=0 1 μA DC current gain IC=50mA ; VCE=10V 30 Transition frequency IC=10mA ; VCE=30V 55 2 150 MHz Inchange Semiconductor Product Specification 2SC1446 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3