Inchange Semiconductor Product Specification 2SC1448 Silicon NPN Power Transistors DESCRIPTION ·With TO-220 package ·High collector-emitter breakdown voltage : VCEO=150V(min) APPLICATIONS ·Power amplifier applications ·Vertical output applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 150 V VCEO Collector-emitter voltage Open base 150 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 1.5 A IB Base current 0.5 A PC Collector power dissipation Ta=25℃ 1.5 W TC=25℃ 25 Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SC1448 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=30mA; IB=0 150 V V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0 5 V Collector-emitter saturation voltage IC=0.5A; IB=50m A 1.5 V ICBO Collector cut-off current VCB=150V;IE=0 20 μA IEBO Emitter cut-off current VEB=5V; IC=0 20 μA hFE DC current gain IC=0.5A ; VCE=10V Transition frequency IC=0.5A ; VCE=10V VCEsat fT CONDITIONS 2 MIN TYP. 40 MAX UNIT 140 5 MHz Inchange Semiconductor Product Specification 2SC1448 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3