ISC 2SC1448

Inchange Semiconductor
Product Specification
2SC1448
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220 package
·High collector-emitter breakdown voltage
: VCEO=150V(min)
APPLICATIONS
·Power amplifier applications
·Vertical output applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
150
V
VCEO
Collector-emitter voltage
Open base
150
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current
1.5
A
IB
Base current
0.5
A
PC
Collector power dissipation
Ta=25℃
1.5
W
TC=25℃
25
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
Inchange Semiconductor
Product Specification
2SC1448
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=30mA; IB=0
150
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA; IC=0
5
V
Collector-emitter saturation voltage
IC=0.5A; IB=50m A
1.5
V
ICBO
Collector cut-off current
VCB=150V;IE=0
20
μA
IEBO
Emitter cut-off current
VEB=5V; IC=0
20
μA
hFE
DC current gain
IC=0.5A ; VCE=10V
Transition frequency
IC=0.5A ; VCE=10V
VCEsat
fT
CONDITIONS
2
MIN
TYP.
40
MAX
UNIT
140
5
MHz
Inchange Semiconductor
Product Specification
2SC1448
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3