Inchange Semiconductor Product Specification 2SC2085 Silicon NPN Power Transistors DESCRIPTION ·With TO-220 package ·High breakdown voltage ·High transition frequency APPLICATIONS ·For line-operated AF amplifier and chrominance output applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 300 V VCEO Collector-emitter voltage Open base 300 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 0.1 A ICM Collector current-peak 0.15 A PC Collector power dissipation 10 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC2085 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-base breakdown voltage IC=100μA ;IE=0 300 V V(BR)CEO Collector-emitter breakdown voltage IC=1mA ;IB=0 300 V V(BR)EBO Emitter-base breakdown voltage IE=100μA ;IC=0 5 V Collector-emitter saturation voltage IC=100mA ;IB=10mA 5.0 V VBE Base-emitter on voltage IC=50mA ; VCE=10V 1.2 V ICEO Collector cut-off current VCE=300V;IB=0 20 μA ICBO Collector cut-off current VCB=300V;IE=0 10 μA IEBO Emitter cut-off current VEB=5V; IC=0 10 μA hFE-1 DC current gain IC=10mA ; VCE=10V 30 hFE -2 DC current gain IC=50mA ; VCE=10V 30 COB Output capacitance IE=0; VCB=30V;f=1MHz 8 pF fT Transition frequency IC=20mA ; VCE=30V 55 MHz VCEsat hFE-2 classifications P Q R 30-60 50-100 80-150 2 150 Inchange Semiconductor Product Specification 2SC2085 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3