ISC 2SC1870

Inchange Semiconductor
Product Specification
2SC1870
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3 package
·High switching speed
APPLICATIONS
·For power switching applications
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
MAXIMUN RATINGS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
300
V
VCEO
Collector-emitter voltage
Open base
250
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current
10
A
IB
Base current
3
A
PT
Total power dissipation
100
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~150
℃
VALUE
UNIT
1.25
℃/W
Tmb≤25℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance from junction to case
Inchange Semiconductor
Product Specification
2SC1870
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter breakdown voltage
IC=10mA ; IB=0
250
V
V(BR)CBO
Collector-base breakdown voltage
IC=1mA ; IE=0
300
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA ; IC=0
7
V
VCEsat
Collector-emitter saturation voltage
IC=5A; IB=1A
1.0
V
VBEsat
Base-emitter saturation voltage
IC=5A; IB=1A
1.5
V
ICBO
Collector cut-off current
VCB=300V; IE=0
0.1
mA
IEBO
Emitter cut-off current
VEB=7V; IC=0
0.1
mA
hFE
DC current gain
IC=10A ; VCE=5V
2
MIN
15
TYP.
MAX
UNIT
Inchange Semiconductor
Product Specification
2SC1870
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3