Inchange Semiconductor Product Specification 2SC3058 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High voltage ,high speed APPLICATIONS ・For switching regulator and DC/DC converter applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol VALUE R O T UC UNIT 600 V 400 V 7 V 30 A 200 W Absolute maximum ratings(Ta=25℃) 体 导 半 SYMBOL VCBO VCEO PARAMETER 固电 VEBO IC CONDITIONS D N O IC Collector-base voltage Open emitter Collector-emitter voltage Open base INC EM S E G N A H Emitter-base voltage Open collector Collector current PT Total power dissipation TC=25℃ Tj Junction temperature 200 ℃ Tstg Storage temperature -65~200 ℃ VALUE UNIT 1.0 ℃/W THERMAL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER Thermal resistance from junction to mounting base Inchange Semiconductor Product Specification 2SC3058 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0 400 V V(BR)CBO Collector-base breakdown voltage IC=1mA; IE=0 600 V V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0 7 V VCEsat Collector-emitter saturation voltage IC=20A; IB=4A 1.0 V VBEsat Base-emitter saturation voltage IC=20A; IB=4A 1.5 V ICBO Collector cut-off current VCB=500V; IE=0 10 μA IEBO Emitter cut-off current VEB=5V; IC=0 10 μA hFE-1 DC current gain hFE-2 fT COB 体 导 半 固电 DC current gain Transition frequency CONDITIONS A H C IN TYP. MAX UNIT IC=20A ; VCE=5V R O T UC IC=4A ; VCE=10V 30 MHz IE=0 ; VCB=10V;f=1MHz 420 pF IC=1A ; VCE=5V EM S E NG Collector output capacitance MIN 2 D N O IC 15 50 10 40 Inchange Semiconductor Product Specification 2SC3058 Silicon NPN Power Transistors PACKAGE OUTLINE 体 导 半 固电 EM S E NG A H C IN D N O IC Fig.2 Outline dimensions 3 R O T UC