Inchange Semiconductor Product Specification 2SC1672 Silicon NPN Power Transistors · DESCRIPTION ·With TO-3 package ·High current capability ·Fast switching speed APPLICATIONS ·Motor control ·Linear and switching applications PINNING(see fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 150 V VCEO Collector-emitter voltage Open base 120 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 25 A ICM Collector current-peak 30 A PT Total power dissipation 120 W Tj Junction temperature 175 ℃ Tstg Storage temperature -55~175 ℃ MAX UNIT 1.17 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification 2SC1672 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A; IB=0 120 V V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0 6 V VCEsat-1 Collector-emitter saturation voltage IC=10A;IB=1A 0.6 V VCEsat-2 Collector-emitter saturation voltage IC=20A;IB=2A 1.2 V Base-emitter saturation voltage IC=20A;IB=2A 2.0 V ICBO Collector cut-off current VCB=150V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=6V; IC=0 0.1 mA hFE-1 DC current gain IC=13A ; VCE=2V 20 hFE-2 DC current gain IC=20A ; VCE=4V 10 VBEsat CONDITIONS 2 MIN TYP. MAX 100 UNIT Inchange Semiconductor Product Specification 2SC1672 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3