Inchange Semiconductor Product Specification 2SC1922 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High breakdown voltage ・High speed switching APPLICATIONS ・For TV horizontal output applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol 导体 半 电 R O T UC Absolute maximum ratings(Ta=25℃) 固 SYMBOL PARAMETER VCBO Collector-base voltage VCEO Collector-emitter voltage VEBO Emitter-base voltage IC CONDITIONS Open emitter M E S E G N A CH IN D N O IC Open base Open collector Collector current TC=25℃ VALUE UNIT 1500 V 800 V 6 V 2.5 A 50 W PT Total power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ VALUE UNIT 2.5 ℃/W THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance from junction to case Inchange Semiconductor Product Specification 2SC1922 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ; IB=0 800 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ; IC=0 6 V VCEsat Collector-emitter saturation voltage IC=2A; IB=0.6A 5.0 V VBEsat Base-emitter saturation voltage IC=2A; IB=0.6A 1.5 V ICBO Collector cut-off current VCB=600V; IE=0 10 μA IEBO Emitter cut-off current VEB=5V; IC=0 10 μA hFE DC current gain IC=0.5A ; VCE=5V 导体 半 电 固 MIN 8 N A H INC 2 MAX 40 R O T UC D N O IC M E S GE TYP. UNIT Inchange Semiconductor Product Specification 2SC1922 Silicon NPN Power Transistors PACKAGE OUTLINE 导体 半 电 固 D N O IC R O T UC M E S GE N A H INC Fig.2 Outline dimensions 3