Inchange Semiconductor Product Specification 2SC2358 Silicon NPN Power Transistors · DESCRIPTION ·With TO-3 package ·High voltage,high speed APPLICATIONS ·Designed for switching-mode power supplies ,CRT scanning,inverters, and other industrial applications PINNING(see fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1000 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 7 V 10 A 150 W IC Collector current PT Total power dissipation Tj Junction temperature 200 ℃ Tstg Storage temperature -65~200 ℃ MAX UNIT 1.17 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification 2SC2358 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-emitter sustaining voltage IC=10mA; IB=0 V(BR)EBO Emitter-base breakdown voltage IE=1m A;IC=0 VCEsat Collector-emitter saturation voltage IC=5 A;IB=1 A 1.5 V VBEsat Base-emitter saturation voltage IC=5 A;IB=1 A 1.5 V ICBO Collector cut-off current VCB=1000V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=7V; IC=0 0.1 mA hFE DC current gain IC=5A ; VCE=5V 2 MIN TYP. MAX UNIT 800 V 7 V 15 Inchange Semiconductor Product Specification 2SC2358 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3