ISC 2SC2588

Inchange Semiconductor
Product Specification
2SC2588
Silicon NPN Power Transistors
·
DESCRIPTION
·With MT-200 package
·Excellent safe operating area
·Fast switching speed
APPLICATIONS
·Suited for high frequency power amplifiers,
audio power amplifiers,switching regulators
and DC-DC converters applications
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (MT-200) and symbol
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
130
V
VCEO
Collector-emitter voltage
Open base
130
V
VEBO
Emitter-base voltage
Open collector
5
V
12
A
120
W
IC
Collector current
PC
Collector power dissipation
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SC2588
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter breakdown voltage
IC=1mA; RBE=∞
120
V
V(BR)CBO
Collector-base breakdown voltage
IC=50μA; IE=0
120
V
V(BR)EBO
Emitter-base breakdown voltage
IE=50μA; IC=0
5
V
VCE(sat)
Collector-emitter saturation voltage
IC=5 A;IB=0.5 A
1.8
V
VBE
Base-emitter voltage
IC=5A ; VCE=5V
1.7
V
ICBO
Collector cut-off current
VCB=120V; IE=0
50
μA
IEBO
Emitter cut-off current
VEB=5V; IC=0
50
μA
hFE-1
DC current gain
IC=2A ; VCE=5V
60
hFE-2
DC current gain
IC=7A ; VCE=5V
40
fT
Transition frequency
IC=1A ; VCB=10V,f=1MHz
60
MHz
COB
Output capacitance
IE=0; VCB=10V;f=1MHz
170
pF
2
MIN
TYP.
MAX
UNIT
200
Inchange Semiconductor
Product Specification
2SC2588
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3