ISC 2SC2788

Inchange Semiconductor
Product Specification
2SC2788
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3PN package
·High breakdown voltage
·Fast switching speed
·Wide area of safe operation
APPLICATIONS
·For switching regulator applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
500
V
VCEO
Collector-emitter voltage
Open base
400
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current
8
A
ICM
Collector current-peak
16
A
IB
Base current
3
A
PC
Collector power dissipation
Ta=25℃
2.5
TC=25℃
80
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
Inchange Semiconductor
Product Specification
2SC2788
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=10mA ;RBE=∞
400
V
V(BR)CBO
Collector-base breakdown voltage
IC=1mA ;IE=0
500
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA ;IC=0
7
V
VCE(sat)
Collector-emitter saturation voltage
IC=4A ;IB=0.8A
1.0
V
VBE(sat)
Base-emitter saturation voltage
IC=4A ;IB=0.8A
1.5
V
ICBO
Collector cut-off current
VCB=400V ;IE=0
100
μA
IEBO
Emitter cut-off current
VEB=5V; IC=0
100
μA
hFE-1
DC current gain
IC=0.8A ; VCE=5V
15
hFE -2
DC current gain
IC=4A ; VCE=5V
8
Transition frequency
IC=0.8A ; VCE=10V
fT
CONDITIONS
2
MIN
TYP.
MAX
UNIT
50
20
MHz
Inchange Semiconductor
Product Specification
2SC2788
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions
3