Inchange Semiconductor Product Specification 2SC2788 Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·High breakdown voltage ·Fast switching speed ·Wide area of safe operation APPLICATIONS ·For switching regulator applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 8 A ICM Collector current-peak 16 A IB Base current 3 A PC Collector power dissipation Ta=25℃ 2.5 TC=25℃ 80 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SC2788 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;RBE=∞ 400 V V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 500 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 7 V VCE(sat) Collector-emitter saturation voltage IC=4A ;IB=0.8A 1.0 V VBE(sat) Base-emitter saturation voltage IC=4A ;IB=0.8A 1.5 V ICBO Collector cut-off current VCB=400V ;IE=0 100 μA IEBO Emitter cut-off current VEB=5V; IC=0 100 μA hFE-1 DC current gain IC=0.8A ; VCE=5V 15 hFE -2 DC current gain IC=4A ; VCE=5V 8 Transition frequency IC=0.8A ; VCE=10V fT CONDITIONS 2 MIN TYP. MAX UNIT 50 20 MHz Inchange Semiconductor Product Specification 2SC2788 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3