JMnic Product Specification 2SA1389 Silicon PNP Power Transistors DESCRIPTION ・With MT-200 package ・Fast switching speed ・Excellent safe operating area APPLICATIONS ・High frequency power amplifiers ・Audio power amplifiers ・Switching regulators ・DC-DC converters PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (MT-200) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -160 V VCEO Collector-emitter voltage Open base -160 V VEBO Emitter-base voltage Open collector -7 V -12 A 120 W IC Collector current PC Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ JMnic Product Specification 2SA1389 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-1mA ;IB=0 V(BR)EBO Emitter-base breakdown voltage IE=-50μA; IC=0 Collector-emitter saturation voltage IC=-5A;IB=-0.5A -1.8 V VBE Base-emitter voltage IC=-5A;VCE=-5V -1.7 V ICBO Collector cut-off current VCB=-160V; IE=0 -50 μA ICEO Collector cut-off current VCE=-160V; IB=0 -1 mA IEBO Emitter cut-off current VEB=-7V; IC=0 -50 μA hFE-1 DC current gain IC=-1A ; VCE=-5V 60 hFE-2 DC current gain IC=-7A ; VCE=-5V 40 Transition frequency IC=-1A ; VCE=-10V VCEsat fT CONDITIONS 2 MIN TYP. MAX UNIT -160 V -7 V 200 30 MHz JMnic Product Specification 2SA1389 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3