JMNIC 2SA1389

JMnic
Product Specification
2SA1389
Silicon PNP Power Transistors
DESCRIPTION
・With MT-200 package
・Fast switching speed
・Excellent safe operating area
APPLICATIONS
・High frequency power amplifiers
・Audio power amplifiers
・Switching regulators
・DC-DC converters
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (MT-200) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-160
V
VCEO
Collector-emitter voltage
Open base
-160
V
VEBO
Emitter-base voltage
Open collector
-7
V
-12
A
120
W
IC
Collector current
PC
Collector power dissipation
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
JMnic
Product Specification
2SA1389
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-1mA ;IB=0
V(BR)EBO
Emitter-base breakdown voltage
IE=-50μA; IC=0
Collector-emitter saturation voltage
IC=-5A;IB=-0.5A
-1.8
V
VBE
Base-emitter voltage
IC=-5A;VCE=-5V
-1.7
V
ICBO
Collector cut-off current
VCB=-160V; IE=0
-50
μA
ICEO
Collector cut-off current
VCE=-160V; IB=0
-1
mA
IEBO
Emitter cut-off current
VEB=-7V; IC=0
-50
μA
hFE-1
DC current gain
IC=-1A ; VCE=-5V
60
hFE-2
DC current gain
IC=-7A ; VCE=-5V
40
Transition frequency
IC=-1A ; VCE=-10V
VCEsat
fT
CONDITIONS
2
MIN
TYP.
MAX
UNIT
-160
V
-7
V
200
30
MHz
JMnic
Product Specification
2SA1389
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions
3