Inchange Semiconductor Product Specification 2SC2523 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·Complement to type 2SA1073 ·Wide area of safe operation APPLICATIONS ·High frequency power amplifier ·Audio power amplifiers ·Switching regulators ·DC-DC converters PINNING(see Fig.2) PIN 1 DESCRIPTION Base Fig.1 simplified outline (TO-3) and symbol 2 Emitter 3 Collector Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 160 V VCEO Collector-emitter voltage Open base 160 V VEBO Emitter-base voltage Open collector 7 V 12 A 120 W IC Collector current PC Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC2523 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=1mA ;RBE=∞ 160 V V(BR)CBO Collector-base breakdown voltage IC=50μA ;IE=0 160 V V(BR)EBO Emitter-base breakdown voltage IE=50μA ;IC=0 7 V Collector-emitter saturation voltage IC=5A ;IB=0.5A 1.8 V VBE Base-emitter on voltage IC=5A ; VCE=5V 1.7 V ICBO Collector cut-off current VCB=160V; IE=0 50 μA ICEO Collector cut-off current VCE=160V; RBE=∞ 1 mA IEBO Emitter cut-off current VEB=7V; IC=0 50 μA hFE-1 DC current gain IC=1A ; VCE=5V 60 hFE-2 DC current gain IC=7A ; VCE=5V 40 COB Output capacitance IE=0 ; VCB=10V;f=1MHz 300 pF fT Transition frequency IC=1A ; VCE=10V;f=10MHz 50 MHz VCEsat CONDITIONS 2 MIN TYP. MAX UNIT 200 Inchange Semiconductor Product Specification 2SC2523 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3