Inchange Semiconductor Product Specification 2SC2902 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High voltage ,high speed APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor controls PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER CONDITIONS MAX UNIT VCBO Collector-base voltage Open emitter 800 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 9 V IC Collector current 15 A ICM Collector current-Peak 30 A PC Collector power dissipation 150 W Tj Junction temperature 200 ℃ Tstg Storage temperature -65~200 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC2902 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN VCEO(SUS) V(BR)EBO Collector-emitter sustaining voltage IC=0.1A ; IB=0; L=25mH 400 V Emitter-base breakdown voltage IE=1mA; IC=0 9 V VCEsat Collector-emitter saturation voltage IC=7.5A; IB=2.5A 1.0 V VBEsat Base-emitter saturation voltage IC=7.5A; IB=2.5A 1.5 V ICBO Collector cut-off current VCB=640V; IE=0 50 μA IEBO Emitter cut-off current VEB=9V; IC=0 50 μA hFE DC current gain IC=7.5A ; VCE=5V 2 10 TYP. MAX 35 UNIT Inchange Semiconductor Product Specification 2SC2902 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3