ISC 2SC2902

Inchange Semiconductor
Product Specification
2SC2902
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3 package
·High voltage ,high speed
APPLICATIONS
·Converters
·Inverters
·Switching regulators
·Motor controls
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
MAX
UNIT
VCBO
Collector-base voltage
Open emitter
800
V
VCEO
Collector-emitter voltage
Open base
400
V
VEBO
Emitter-base voltage
Open collector
9
V
IC
Collector current
15
A
ICM
Collector current-Peak
30
A
PC
Collector power dissipation
150
W
Tj
Junction temperature
200
℃
Tstg
Storage temperature
-65~200
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SC2902
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
VCEO(SUS)
V(BR)EBO
Collector-emitter sustaining voltage
IC=0.1A ; IB=0; L=25mH
400
V
Emitter-base breakdown voltage
IE=1mA; IC=0
9
V
VCEsat
Collector-emitter saturation voltage
IC=7.5A; IB=2.5A
1.0
V
VBEsat
Base-emitter saturation voltage
IC=7.5A; IB=2.5A
1.5
V
ICBO
Collector cut-off current
VCB=640V; IE=0
50
μA
IEBO
Emitter cut-off current
VEB=9V; IC=0
50
μA
hFE
DC current gain
IC=7.5A ; VCE=5V
2
10
TYP.
MAX
35
UNIT
Inchange Semiconductor
Product Specification
2SC2902
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3