Inchange Semiconductor Product Specification 2SD546 Silicon NPN Power Transistors DESCRIPTION ·With TO-66 package ·High breakdown voltage APPLICATIONS ·Converters ·Inverters ·Switching regulators PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 800 V VCEO Collector-emitter voltage Open base 500 V VEBO Emitter-base voltage Open collector 6 V 1 A 30 W IC Collector current PC Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SD546 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=30mA ;IB=0 500 V Emitter-base breakdown voltage IE=1mA ;IC=0 6 V VCEsat Collector-emitter saturation voltage IC=500mA; IB=100mA 1.0 V VBEsat Base-emitter saturation voltage IC=500mA; IB=100mA 1.5 V ICBO Collector cut-off current VCB=800V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=6V; IC=0 0.1 mA hFE DC current gain IC=20mA ; VCE=10V Transition frequency IC=0.1A ; VCE=10V V(BR)EBO fT CONDITIONS MIN TYP. B B 2 40 MAX UNIT 200 7 MHz Inchange Semiconductor Product Specification 2SD546 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3